Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.
Adv Mater. 2016 May;28(17):3391-8. doi: 10.1002/adma.201506472. Epub 2016 Mar 3.
A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
本文展示了一种等离子体诱导的 p 型 MoS2 薄片和 n 型 ZnO 薄膜二极管，其具有优异的整流比。在 365nm 光照射下，该 p-n 二极管表现出强烈的光响应，外量子效率为 52.7%，响应时间为 66ms。通过在结处施加 23MPa 的压力，通过压光电效应可以将光电流增强 4 倍。
Zotero 插件