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宽带隙半导体与二维材料的异质集成:工艺、应用及展望

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives.

作者信息

Choi Soo Ho, Kim Yongsung, Jeon Il, Kim Hyunseok

机构信息

Department of Nano Engineering, Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.

Department of Electrical and Computer Engineering, Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA.

出版信息

Adv Mater. 2025 Mar;37(12):e2411108. doi: 10.1002/adma.202411108. Epub 2024 Oct 19.

DOI:10.1002/adma.202411108
PMID:39425567
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11937997/
Abstract

Wide-bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost-effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures.

摘要

宽带隙半导体(WBGs)是许多现代电子设备的关键组成部分。然而,在提高WBGs的晶体质量、材料/异质结构的可选性、可扩展性和成本效益方面仍有很大空间。在这方面,将二维层状材料与WBGs结合使用正成为一种有前景的解决方案。本文综述了WBGs与二维材料集成的最新进展,包括制造技术、机理、器件和新功能。讨论了各种WBGs和二维材料的特性、它们的集成技术,包括外延和非外延生长方法以及转移技术,以及它们的优点和挑战。此外,还介绍了基于WBG/二维异质结构的器件和应用。详细描述了将二维材料与WBGs合并的独特优势,以及克服当前挑战和释放WBG/二维异质结构未开发潜力的策略展望。

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2
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3
Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene.
确定湿转移石墨烯上III族氮化物半导体的优选外延。
Sci Adv. 2023 Aug 2;9(31):eadf8484. doi: 10.1126/sciadv.adf8484.
4
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.通过基于二维材料的层转移工艺从单个晶圆片上高通量制造外延膜。
Nat Nanotechnol. 2023 May;18(5):464-470. doi: 10.1038/s41565-023-01340-3. Epub 2023 Mar 20.
5
Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer.石墨烯辅助衰减电荷转移对远程外延异质界面的调制
ACS Nano. 2023 Feb 28;17(4):4023-4033. doi: 10.1021/acsnano.3c00026. Epub 2023 Feb 6.
6
Vertical full-colour micro-LEDs via 2D materials-based layer transfer.基于二维材料层转移技术的垂直全彩微型 LED
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7
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Science. 2022 Aug 19;377(6608):859-864. doi: 10.1126/science.abn7325. Epub 2022 Aug 18.
8
Large-scale synthesis of graphene and other 2D materials towards industrialization.大规模合成石墨烯和其他二维材料以实现工业化。
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9
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10
Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes.用于长波长发光二极管的应变弛豫氮化镓薄膜在石墨烯/碳化硅衬底上的外延生长演示。
Light Sci Appl. 2021 Jun 3;10(1):117. doi: 10.1038/s41377-021-00560-3.