Zhou Badi, Peng Xiaoyan, Chu Jin, Malca Carlos, Diaz Liz, Zhou Andrew F, Feng Peter X
Department of Chemistry, Biochemistry, Physics, and Engineering, Indiana University of Pennsylvania, Indiana, PA 15705, USA.
College of Artificial Intelligence, Southwest University, Chongqing 400715, China.
Molecules. 2025 Feb 26;30(5):1063. doi: 10.3390/molecules30051063.
This study presents the fabrication and characterization of ZnO-MoS heterostructure-based ultra-broadband photodetectors capable of operating across the ultraviolet (UV) to mid-infrared (MIR) spectral range (365 nm-10 μm). The p-n heterojunction was synthesized via RF magnetron sputtering and spin coating, followed by annealing. Structural and optical analyses confirmed their enhanced light absorption, efficient charge separation, and strong built-in electric field. The photodetectors exhibited light-controlled hysteresis in their I-V characteristics, attributed to charge trapping and interfacial effects, which could enable applications in optical memory and neuromorphic computing. The devices operated self-powered, with a peak responsivity at 940 nm, which increased significantly under an applied bias. The response and recovery times were measured at approximately 100 ms, demonstrating their fast operation. Density functional theory (DFT) simulations confirmed the type II band alignment, with a tunable bandgap that was reduced to 0.20 eV with Mo vacancies, extending the detection range. The ZnO-MoS heterostructure's broad spectral response, fast operation, and defect-engineered bandgap tunability highlight its potential for imaging, environmental monitoring, and IoT sensing. This work provides a cost-effective strategy for developing high-performance, ultra-broadband, flexible photodetectors, paving the way for advancements in optoelectronics and sensing technologies.
本研究展示了基于ZnO-MoS异质结构的超宽带光电探测器的制备与特性，该探测器能够在紫外（UV）到中红外（MIR）光谱范围（365 nm - 10 μm）内工作。通过射频磁控溅射和旋涂合成p-n异质结，随后进行退火。结构和光学分析证实了它们增强的光吸收、有效的电荷分离以及强大的内建电场。光电探测器在其I-V特性中表现出光控滞后现象，这归因于电荷俘获和界面效应，这使其能够应用于光存储器和神经形态计算。这些器件自供电运行，在940 nm处具有峰值响应度，在施加偏压时显著增加。响应和恢复时间测量约为100 ms，表明其运行速度快。密度泛函理论（DFT）模拟证实了II型能带排列，通过Mo空位可将可调带隙减小至0.20 eV，扩展了检测范围。ZnO-MoS异质结构的宽光谱响应、快速运行以及缺陷工程化的带隙可调性突出了其在成像、环境监测和物联网传感方面的潜力。这项工作为开发高性能、超宽带、柔性光电探测器提供了一种经济高效的策略，为光电子学和传感技术的进步铺平了道路。
