Klym Halyna, Karbovnyk Ivan, Guidi Mariangela Cestelli, Hotra Oleksandra, Popov Anatoli I
Lviv Polytechnic National University, 12 Bandery str., Lviv, 79013, Ukraine.
Department of Electronics, Ivan Franko National University of Lviv, 107 Tarnavskogo str., Lviv, 79017, Ukraine.
Nanoscale Res Lett. 2016 Dec;11(1):132. doi: 10.1186/s11671-016-1350-8. Epub 2016 Mar 9.
Optical and FTIR spectroscopy was employed to study the properties of 80GeS2-20Ga2S3-CsCl chalcohalide glasses with CsCl additives in a temperature range of 77-293 K. It is shown that CsCl content results in the shift of fundamental absorption edge in the visible region. Vibrational bands in FTIR spectra of (80GeS2-20Ga2S3)100 - х (СsCl) x (x = 5, 10, and 15) are identified near 2500 cm(-1), 3700 cm(-1),, around 1580 cm(-1), and a feature at 1100 cm(-1). Low energy shifts of vibrational frequencies in glasses with a higher amount of CsCl can be caused by possible thermal expansion of the lattice and nanovoid agglomeration formed by CsCl additives in the inner structure of the Ge-Ga-S glass.
采用光学光谱和傅里叶变换红外光谱(FTIR)研究了添加CsCl的80GeS2 - 20Ga2S3 - CsCl硫卤化物玻璃在77 - 293 K温度范围内的性质。结果表明,CsCl含量导致可见光区域基本吸收边发生位移。在(80GeS2 - 20Ga2S3)100 - х (СsCl) x(x = 5、10和15)的FTIR光谱中,在2500 cm(-1)、3700 cm(-1)附近、1580 cm(-1)左右以及1100 cm(-1)处识别出振动带。CsCl含量较高的玻璃中振动频率的低能量位移可能是由晶格可能的热膨胀以及CsCl添加剂在Ge - Ga - S玻璃内部结构中形成的纳米空洞团聚引起的。