Kozlovskiy Artem, Shlimas Dmitriy I, Zdorovets Maxim V, Popova Elena, Elsts Edgars, Popov Anatoli I
Engineering Profile Laboratory, L. N. Gumilyov Eurasian National University, Satpaev Str. 5, Nur-Sultan 010008, Kazakhstan.
Laboratory of Solid State Physics, The Institute of Nuclear Physics, Ibrag and ov Str. 1, Almaty 050032, Kazakhstan.
Materials (Basel). 2022 Sep 1;15(17):6071. doi: 10.3390/ma15176071.
This article considers the effect of MoO and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO-WO-BiO-MoO-SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.
本文研究了碲化物玻璃中MoO和SiO添加剂对在辐射背景增强或宇宙辐射条件下运行的电子微电路屏蔽特性及保护作用的影响。选择MoO和SiO掺杂剂是因为它们的特性，包括绝缘特性，使得避免因辐射损伤引起的击穿过程成为可能。该研究的意义在于所提出的使用防护玻璃来保护电子电路最重要部件免受电离辐射负面影响的方法，电离辐射可能导致电子设备出现故障或不稳定。使用一种标准方法对γ射线和电子辐射的屏蔽效率进行了评估，该方法用于确定置于屏蔽层后面并受到不同剂量辐照的微电路阈值电压（∆U）值的变化。结果表明，玻璃结构中MoO和SiO含量的增加导致γ射线屏蔽效率提高了90%，同时在长时间暴露于电离辐射下微电路性能保持稳定。所得结果使我们能够得出结论，基于TeO-WO-BiO-MoO-SiO的防护玻璃对于在背景辐射增强或宇宙辐射条件下运行的微电路和半导体器件的主要部件创建局部保护具有很大的前景。
