Mahajan Chaitanya G, Alfadhel Ahmed, Irving Mark, Kahn Bruce E, Borkholder David A, Williams Scott A, Cormier Denis
Department of Industrial and Systems Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA.
Microsystems Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA.
Materials (Basel). 2019 Mar 20;12(6):928. doi: 10.3390/ma12060928.
This paper demonstrates an easily prepared novel material and approach to producing aligned nickel (Ni) nanowires having unique and customizable structures on a variety of substrates for electronic and magnetic applications. This is a new approach to producing printed metallic Ni structures from precursor materials, and it provides a novel technique for nanowire formation during reduction. This homogeneous solution can be printed in ambient conditions, and it forms aligned elemental Ni nanowires over large areas upon heating in the presence of a magnetic field. The use of templates or subsequent purification are not required. This technique is very flexible, and allows the preparation of unique patterns of nanowires which provides opportunities to produce structures with enhanced anisotropic electrical and magnetic properties. An example of this is the unique fabrication of aligned nanowire grids by overlaying layers of nanowires oriented at different angles with respect to each other. The resistivity of printed and cured films was found to be as low as 560 µΩ∙cm. The saturation magnetization was measured to be 30 emu∙g, which is comparable to bulk Ni. Magnetic anisotropy was induced with an axis along the direction of the applied magnetic field, giving soft magnetic properties.
本文展示了一种易于制备的新型材料和方法,可在各种用于电子和磁性应用的基板上制备具有独特且可定制结构的取向镍(Ni)纳米线。这是一种从前体材料制备印刷金属镍结构的新方法,并且它为还原过程中的纳米线形成提供了一种新技术。这种均匀溶液可在环境条件下进行印刷,并且在磁场存在下加热时会在大面积上形成取向的元素镍纳米线。无需使用模板或后续纯化。该技术非常灵活,并且允许制备独特的纳米线图案,这为生产具有增强的各向异性电学和磁学性能的结构提供了机会。一个例子是通过叠加彼此以不同角度取向的纳米线层来独特地制造取向纳米线网格。发现印刷并固化的薄膜的电阻率低至560μΩ∙cm。测量的饱和磁化强度为30 emu∙g,这与块状镍相当。沿施加磁场方向的轴诱导了磁各向异性,赋予了软磁特性。