用于制造高效倒置量子点发光器件（QLED）的强脉冲光（IPL）退火溶胶-凝胶衍生的ZnO电子注入器。
Intense pulsed light (IPL) annealed sol-gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs).
作者信息
Kathirgamanathan Poopathy, Kumaraverl Muttulingam, Vanga Raghava Reddy, Ravichandran Seenivasagam
机构信息
Organic Electronics Group, Wolfson Centre, Brunel University London Uxbridge UB8 3PH UK
出版信息
RSC Adv. 2018 Oct 30;8(64):36632-36646. doi: 10.1039/c8ra08136k. eCollection 2018 Oct 26.
Room temperature intense pulsed light annealing (photonic annealing, pulsed forge) renders the sol-gel derived ZnO films highly conductive and hydrophobic with improved interface with the colloidal quantum dots. The IPL annealed ZnO proved to be a better electron transporter/injector in inverted devices with QDs. Both the current and power efficiencies of red devices comprising IPL annealed ZnO were 13.75 and 37.5 fold higher than the identical devices produced with thermally annealed ZnO. The lifetime of the devices with IPL annealed ZnO was found to be fivefold longer than the thermally annealed ZnO counterpart. Thermally aged devices comprising IPL annealed ZnO gave a maximum current efficiency of 23 cd A and a power efficiency of 30 lm W.
室温强脉冲光退火（光子退火、脉冲锻造）使溶胶-凝胶法制备的ZnO薄膜具有高导电性和疏水性，并改善了与胶体量子点的界面。在具有量子点的倒置器件中，IPL退火的ZnO被证明是一种更好的电子传输体/注入体。包含IPL退火ZnO的红色器件的电流效率和功率效率分别比热退火ZnO制成的相同器件高13.75倍和37.5倍。发现具有IPL退火ZnO的器件的寿命比热退火ZnO的器件长五倍。包含IPL退火ZnO的热老化器件的最大电流效率为23 cd/A，功率效率为30 lm/W。
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