JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany.
Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich , 52425 Jülich, Germany.
ACS Appl Mater Interfaces. 2016 Apr 13;8(14):9377-83. doi: 10.1021/acsami.6b01727. Epub 2016 Mar 31.
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
我们提出了一种在石墨烯-六方氮化硼异质结构中创建和擦除空间分辨掺杂轮廓的方法。该技术基于聚焦激光束的光致掺杂，既不需要掩模也不需要光致抗蚀剂。这使得我们的技术对于非常规电子器件方案的快速原型制作很有吸引力，其中可重写、长期稳定的掺杂轮廓的空间分辨率仅受激光光斑大小（≈600nm）和样品定位精度的限制。我们的光学掺杂方法提供了一种在一个石墨烯器件中实现和测试不同、复杂掺杂模式的方法，这是传统门控技术无法实现的。
