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扶手椅型硅烯纳米带中的氢化和电场诱导磁行为。

Hydrogenations and electric field induced magnetic behaviors in armchair silicene nanoribbons.

作者信息

Zhang Dan, Long Mengqiu, Xie Fang, Ouyang Jun, Xu Hui, Gao Yongli

机构信息

Institute of Super-microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha 410083, China.

Physical Science and Technology College of Yichun University, Yichun 336000, China.

出版信息

Sci Rep. 2016 Mar 30;6:23677. doi: 10.1038/srep23677.

DOI:10.1038/srep23677
PMID:27026136
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4812249/
Abstract

Using the first-principles calculations, we investigate the geometric, electronic and magnetic properties of armchair silicene nanoribbons with different edge hydrogenations. Our results show that the interesting magnetic behaviors such as the bipolar magnetic semiconductor can be found. Moreover, the addition of the transverse electric field can modulate the bipolar magnetic semiconductor to half-metal or spin-splitting metal. And the spin-up electrons are localized at one edge, the spin-down holes localized at the opposite edge under the external electric field. These results may present a new avenue for band engineering of silicene nanoribbons and benefit the design of silicon-based nano-spin-devices in nanoelectronics.

摘要

通过第一性原理计算,我们研究了具有不同边缘氢化的扶手椅型硅烯纳米带的几何、电子和磁性性质。我们的结果表明,可以发现诸如双极磁性半导体等有趣的磁行为。此外,施加横向电场可将双极磁性半导体调制为半金属或自旋分裂金属。在外加电场下,自旋向上的电子定域在一个边缘,自旋向下的空穴定域在相对的边缘。这些结果可能为硅烯纳米带的能带工程提供一条新途径,并有利于纳米电子学中基于硅的纳米自旋器件的设计。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/f6963f1cd5ed/srep23677-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/4dcbb95632cc/srep23677-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/e8665f5e2d48/srep23677-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/aa514d94acea/srep23677-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/f6963f1cd5ed/srep23677-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/4dcbb95632cc/srep23677-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/e8665f5e2d48/srep23677-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/aa514d94acea/srep23677-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1aca/4812249/f6963f1cd5ed/srep23677-f4.jpg

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本文引用的文献

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First-Principles Prediction of the Charge Mobility in Black Phosphorus Semiconductor Nanoribbons.黑磷半导体纳米带中电荷迁移率的第一性原理预测
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Silicene field-effect transistors operating at room temperature.硅烯室温下的场效应晶体管。
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