Institute of Chemical Physics, University of Latvia , 19 Raina Blvd., LV-1586 Riga, Latvia.
Department of Physics and Mathematics, University of Latvia , 25 Zellu Str., LV-1002 Riga, Latvia.
ACS Appl Mater Interfaces. 2016 May 18;8(19):12257-62. doi: 10.1021/acsami.6b00406. Epub 2016 May 3.
We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.
我们展示了一种简单且低成本的方法，用于制备用于光电和热电应用的层状器件。这些器件由随机取向的纳米板和柔性纳米带组成的 Bi2Se3 功能层组成，夹在两个平整的氧化铟锡（ITO）电极之间。通过在电路中逐渐进行纳米机电（NEM）切换，可以增加 ITO 电极之间的功能连接数量，从而提高器件的效率。通过向器件施加外部电压可以实现 NEM 切换。我们首次研究了 Bi2Se3 纳米带的原位 NEM 切换和击穿参数，可视化了在施加外部电压影响下器件中发生的过程，并确定了可能的操作条件的限制。
