2010 Black Engineering Building, Department of Mechanical Engineering, Iowa State University, Ames, IA 50011, USA.
Nanoscale. 2016 May 21;8(19):10298-309. doi: 10.1039/c6nr02258h. Epub 2016 Apr 29.
The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the μm level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is ∼mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in μm-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m(-1) K(-1), 359 W m(-1) K(-1), 273 W m(-1) K(-1) and 33.5 W m(-1) K(-1), respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp(2) domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the other three. This further confirms the poor graphene quality of sample 4S, explaining its much lower k.
支撑石墨烯的热导率(k)是反映石墨烯-衬底相互作用、石墨烯结构质量的关键性质,是石墨烯器件热设计所必需的。然而,相关的 k 值测量从未是一项简单的工作,迄今为止,仅有很少的研究报告,而且只在微米级水平进行。在这项工作中,我们首次使用基于差分概念的瞬态电热技术,对聚甲基丙烯酸甲酯(PMMA)支撑的大块化学气相分解(CVD)石墨烯的 k 值进行了表征。我们的石墨烯尺寸约为毫米级,远远超过了过去研究的样品。这种大块石墨烯测量消除了在微米级石墨烯 k 值测量中遇到的热接触电阻问题和边缘声子散射问题。这种毫米级的测量对于器件/系统级的热设计至关重要,因为它反映了石墨烯中大量晶粒的影响。1.33 层、1.53 层、2.74 层和 5.2 层支撑石墨烯的 k 值分别测量为 365 W m(-1) K(-1)、359 W m(-1) K(-1)、273 W m(-1) K(-1)和 33.5 W m(-1) K(-1)。这些值明显低于 SiO2 上支撑石墨烯的 k 值,约为悬浮石墨烯 k 值的一个数量级。我们推测,PMMA 中丰富的 C 原子与支撑石墨烯更容易进行能量和动量交换,导致更多的声子散射,而不是 SiO2 衬底。这导致 CVD 石墨烯在 PMMA 上的 k 值低于在 SiO2 上的 k 值。我们认为 5.2 层石墨烯中 sp(2) 域、氧化石墨烯(GO)和分层的存在导致其 k 值降低更多。5.2 层石墨烯的拉曼线宽(G 峰)也比其他三种石墨烯的两倍大,表明其中声子散射和声子寿命更短。此外,5.2 层石墨烯的电导率也约为其他三种的五分之一。这进一步证实了样品 4S 的石墨烯质量较差,解释了其 k 值较低的原因。