一种利用GaN隧道结接触的III族氮化物边缘发射激光二极管的演示。

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.

作者信息

Yonkee Benjamin P, Young Erin C, Lee Changmin, Leonard John T, DenBaars Steven P, Speck James S, Nakamura Shuji

出版信息

Opt Express. 2016 Apr 4;24(7):7816-22. doi: 10.1364/OE.24.007816.

DOI:10.1364/OE.24.007816

Abstract

We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was grown using a combination of metal-organic chemical-vapor deposition (MOCVD) and ammonia-based molecular-beam epitaxy (MBE) which allowed to be regrown over activated p-GaN. For a laser bar with dimensions of 1800 µm x 2.5 µm, without facet coatings, the threshold current was 284 mA (6.3 kA/cm) and the single facet slope efficiency was 0.33 W/A (12% differential efficiency). A differential resistivity at high current density of 2.3 × 10 Ω cm was measured.

摘要

我们展示了一种在（2021）体 GaN 衬底上生长的具有用于空穴注入的 GaN 隧道结接触的 III 族氮化物边缘发射激光二极管（EELD）。该隧道结采用金属有机化学气相沉积（MOCVD）和基于氨的分子束外延（MBE）相结合的方法生长，这种方法允许在活化的 p-GaN 上重新生长。对于尺寸为 1800 µm x 2.5 µm 且无刻面涂层的激光条，阈值电流为 284 mA（6.3 kA/cm），单面斜率效率为 0.33 W/A（12% 微分效率）。测量了在 2.3×10 Ω cm 的高电流密度下的微分电阻率。