用于高功率半极性III族氮化物边缘发射激光二极管的高效隧道结接触

Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes.

作者信息

Hamdy Kareem W, Young Erin C, Alhassan Abdullah I, Becerra Daniel L, DenBaars Steven P, Speck James S, Nakamura Shuji

出版信息

Opt Express. 2019 Mar 18;27(6):8327-8334. doi: 10.1364/OE.27.008327.

DOI:10.1364/OE.27.008327

Abstract

We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.

摘要

我们展示了通过分子束外延（MBE）生长的具有隧道结接触的高功率边缘发射激光二极管（LD）。在脉冲条件下，观察到具有MBE生长隧道结的LD的阈值电流密度低于具有ITO接触的类似制造的对照LD。此外还展示了通过金属有机化学气相沉积（MOCVD）生长的具有隧道结接触的LD。这些LD是使用p-GaN激活方案制造的，该方案利用氢通过LD脊侧壁的横向扩散。对MBE生长和MOCVD生长的隧道结中的[Si]和[Mg]分布进行了二次离子质谱测量，以进一步研究结果。