由隧道结互连的两个III族氮化物激光二极管堆叠体。

Stack of two III-nitride laser diodes interconnected by a tunnel junction.

作者信息

Siekacz M, Muziol G, Hajdel M, Żak M, Nowakowski-Szkudlarek K, Turski H, Sawicka M, Wolny P, Feduniewicz-Żmuda A, Stanczyk S, Moneta J, Skierbiszewski C

出版信息

Opt Express. 2019 Feb 18;27(4):5784-5791. doi: 10.1364/OE.27.005784.

DOI:10.1364/OE.27.005784

PMID:30876173

Abstract

We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction. In particular, we show that, apart from the beneficial piezoelectric polarization inside the TJ, heavy doping reduces the differential resistivity even further. The device starts to lase at a wavelength of 459 nm with a slope efficiency (SE) of 0.7 W/A followed by lasing at 456 nm from the second active region doubling the total SE to 1.4 W/A. This demonstration opens new possibilities for the fabrication of stacks of ultraviolet and visible high power pulsed III-nitride LD.

摘要

我们展示了通过等离子体辅助分子束外延生长的隧道结互连的两个III族氮化物激光二极管（LD）堆叠结构。采用无氢生长来获得对于掩埋隧道结（TJ）至关重要的生长态p型导电性。我们展示了隧道结设计的影响。特别是，我们表明，除了TJ内部有益的压电极化外，重掺杂进一步降低了微分电阻率。该器件在459 nm波长处开始激射，斜率效率（SE）为0.7 W/A，随后第二个有源区在456 nm处激射，使总SE翻倍至1.4 W/A。这一演示为制造紫外和可见光高功率脉冲III族氮化物LD堆叠结构开辟了新的可能性。