• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

（3-氨丙基）三乙氧基硅烷和三苯基膦处理增强的宽检测范围二硒化铼光电探测器。

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment.

机构信息

School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.

出版信息

Adv Mater. 2016 Aug;28(31):6711-8. doi: 10.1002/adma.201601248. Epub 2016 May 11.

DOI:10.1002/adma.201601248
PMID:27167366
Abstract

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm).

摘要

通过与传统的 MoS2 器件进行比较，系统地研究了三苯基膦和（3-氨丙基）三乙氧基硅烷对二硒化铼（ReSe2）光探测器的影响。本研究展示了一种具有高光响应率（1.18×10^6 A W^-1）、快速光开关速度（上升/下降时间：58/263 ms）和宽光探测范围（可能超过 1064 nm）的高性能 ReSe2 光探测器。

相似文献

1
Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment.（3-氨丙基）三乙氧基硅烷和三苯基膦处理增强的宽检测范围二硒化铼光电探测器。
Adv Mater. 2016 Aug;28(31):6711-8. doi: 10.1002/adma.201601248. Epub 2016 May 11.
2
Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).光电探测器：通过（3-氨丙基）三乙氧基硅烷和三苯基膦处理增强的宽检测范围二硒化铼光电探测器（Adv. Mater. 31/2016）。
Adv Mater. 2016 Aug;28(31):6518. doi: 10.1002/adma.201670212.
3
Rhenium Diselenide (ReSe) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique.二硒化铼（ReSe）近红外光电探测器：通过选择性p型掺杂技术提高性能
Adv Sci (Weinh). 2019 Aug 27;6(21):1901255. doi: 10.1002/advs.201901255. eCollection 2019 Nov 6.
4
A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.一种基于三苯基膦（PPh3）n 型掺杂技术的高性能 WSe2/h-BN 光电探测器。
Adv Mater. 2016 Jun;28(24):4824-31. doi: 10.1002/adma.201600032. Epub 2016 Apr 23.
5
An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure.基于钙钛矿-过渡金属二卤化物杂化结构的超高性能光电探测器。
Adv Mater. 2016 Sep;28(35):7799-806. doi: 10.1002/adma.201600992. Epub 2016 Jun 28.
6
Stable and Reversible Triphenylphosphine-Based n-Type Doping Technique for Molybdenum Disulfide (MoS).基于三苯基膦的稳定可逆 n 型掺杂技术用于二硫化钼 (MoS)。
ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32765-32772. doi: 10.1021/acsami.8b06767. Epub 2018 Sep 17.
7
Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse.染料敏化 MoS2 光电探测器，具有增强的光谱光响应。
ACS Nano. 2014 Aug 26;8(8):8285-91. doi: 10.1021/nn502715h.
8
High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment.通过氧等离子体处理实现高性能二维二硫化铼（ReS2）晶体管和光电探测器。
Adv Mater. 2016 Aug;28(32):6985-92. doi: 10.1002/adma.201601002. Epub 2016 May 20.
9
Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode.基于隧穿效应的黑磷/六方氮化硼/二硒化铼范德华异质结二极管中的整流与光响应特性
Nanoscale. 2020 Feb 6;12(5):3455-3468. doi: 10.1039/c9nr07971h.
10
Ultrabroadband MoS Photodetector with Spectral Response from 445 to 2717 nm.超宽频 MoS 光电探测器，光谱响应范围从 445nm 至 2717nm。
Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201605972. Epub 2017 Feb 23.

引用本文的文献

1
Miniaturized spectrometer with intrinsic long-term image memory.具有固有长期图像记忆功能的微型光谱仪。
Nat Commun. 2024 Jan 23;15(1):676. doi: 10.1038/s41467-024-44884-1.
2
Enhanced Photodetection Range from Visible to Shortwave Infrared Light by ReSe/MoTe van der Waals Heterostructure.通过ReSe/MoTe范德华异质结构实现从可见光到短波红外光的增强光探测范围
Nanomaterials (Basel). 2022 Aug 3;12(15):2664. doi: 10.3390/nano12152664.
3
2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications.
用于高效光电探测的二维材料：概述、机制、性能及紫外-红外波段应用
Front Chem. 2022 May 20;10:905404. doi: 10.3389/fchem.2022.905404. eCollection 2022.
4
A review of molybdenum disulfide (MoS) based photodetectors: from ultra-broadband, self-powered to flexible devices.基于二硫化钼（MoS）的光电探测器综述：从超宽带、自供电到柔性器件
RSC Adv. 2020 Aug 19;10(51):30529-30602. doi: 10.1039/d0ra03183f. eCollection 2020 Aug 17.
5
Precise and Prompt Analyte Detection via Ordered Orientation of Receptor in WSe-Based Field Effect Transistor.通过基于WSe的场效应晶体管中受体的有序取向实现精确且快速的分析物检测。
Nanomaterials (Basel). 2022 Apr 11;12(8):1305. doi: 10.3390/nano12081305.
6
The first-principles study on Mo-doped monolayer ReS.钼掺杂单层二硫化铼的第一性原理研究
J Mol Model. 2022 Mar 19;28(4):93. doi: 10.1007/s00894-022-05080-4.
7
Enhancement of Photodetective Properties on Multilayered MoS Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors.通过自组装聚-L-赖氨酸处理增强多层MoS薄膜晶体管的光电探测特性及其在光学传感器中的潜在应用
Nanomaterials (Basel). 2021 Jun 17;11(6):1586. doi: 10.3390/nano11061586.
8
Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe and PdSe.具有MoTe和PdSe过渡金属二硫属化物范德华异质结构的高灵敏度、超快和宽带光电探测场效应晶体管。
Adv Sci (Weinh). 2021 Jun;8(11):e2003713. doi: 10.1002/advs.202003713. Epub 2021 Mar 16.
9
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications.二维半导体材料电掺杂的最新进展：方法、分析与应用
Nanomaterials (Basel). 2021 Mar 24;11(4):832. doi: 10.3390/nano11040832.
10
2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities.基于二维铼的过渡金属硫族化合物：进展、挑战与机遇
Adv Sci (Weinh). 2020 Oct 25;7(23):2002320. doi: 10.1002/advs.202002320. eCollection 2020 Dec.