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子晶格干涉作为石墨烯中σ带扭结的起源

Sublattice Interference as the Origin of σ Band Kinks in Graphene.

作者信息

Jung Sung Won, Shin Woo Jong, Kim Jimin, Moreschini Luca, Yeom Han Woong, Rotenberg Eli, Bostwick Aaron, Kim Keun Su

机构信息

Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang 37673, Korea.

Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea.

出版信息

Phys Rev Lett. 2016 May 6;116(18):186802. doi: 10.1103/PhysRevLett.116.186802. Epub 2016 May 5.

Abstract

Kinks near the Fermi level observed in angle-resolved photoemission spectroscopy (ARPES) have been widely accepted to represent electronic coupling to collective excitations, but kinks at higher energies have eluded a unified description. We identify the mechanism leading to such kink features by means of ARPES and tight-binding band calculations on σ bands of graphene, where anomalous kinks at energies as high as ∼4  eV were reported recently [Phys. Rev. Lett. 111, 216806 (2013)]. We found that two σ bands show a strong intensity modulation with abruptly vanishing intensity near the kink features, which is due to sublattice interference. The interference induced local singularity in the matrix element is a critical factor that gives rise to apparent kink features, as confirmed by our spectral simulations without involving any coupling to collective excitations.

摘要

角分辨光电子能谱(ARPES)中在费米能级附近观测到的扭折已被广泛认为代表了电子与集体激发的耦合,但更高能量处的扭折尚未得到统一描述。我们通过对石墨烯σ能带进行ARPES测量和紧束缚能带计算,确定了导致此类扭折特征的机制,最近有报道称在高达约4 eV的能量处存在反常扭折[《物理评论快报》111, 216806 (2013)]。我们发现两个σ能带表现出强烈的强度调制,在扭折特征附近强度突然消失,这是由于子晶格干涉所致。正如我们在不涉及任何与集体激发耦合的光谱模拟中所证实的那样,干涉在矩阵元中诱导的局部奇点是产生明显扭折特征的关键因素。

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