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在自组装单分子膜上生长的方解石晶体中单位错环的应变释放。

Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers.

机构信息

School of Chemistry, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, UK.

Stanford PULSE Institute, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.

出版信息

Nat Commun. 2016 Jun 15;7:11878. doi: 10.1038/ncomms11878.

Abstract

Most of our knowledge of dislocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorganic heterostructures. Here we use Bragg coherent diffraction imaging to investigate a contrasting system, the epitaxial growth of calcite (CaCO3) crystals on organic self-assembled monolayers, where these are widely used as a model for biomineralization processes. The calcite crystals are imaged to simultaneously visualize the crystal morphology and internal strain fields. Our data reveal that each crystal possesses a single dislocation loop that occupies a common position in every crystal. The loops exhibit entirely different geometries to misfit dislocations generated in conventional epitaxial thin films and are suggested to form in response to the stress field, arising from interfacial defects and the nanoscale roughness of the substrate. This work provides unique insight into how self-assembled monolayers control the growth of inorganic crystals and demonstrates important differences as compared with inorganic substrates.

摘要

我们对晶体外延生长过程中位错介导的应力松弛的大部分认识都来自对无机异质结构的研究。在这里,我们使用布拉格相干衍射成像技术研究了一个对比系统,即方解石(CaCO3)晶体在有机自组装单层上的外延生长,这些自组装单层广泛用于生物矿化过程的模型。我们对方解石晶体进行成像,以同时可视化晶体形态和内部应变场。我们的数据表明,每个晶体都有一个单一位错环,它占据每个晶体的共同位置。这些环的几何形状与传统外延薄膜中产生的失配位错完全不同,它们被认为是为了应对界面缺陷和衬底纳米级粗糙度引起的应力场而形成的。这项工作提供了对方解石晶体生长过程中自组装单层如何控制的独特见解,并展示了与无机衬底相比的重要差异。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/39ed/4912617/0dd4e4bcecea/ncomms11878-f1.jpg

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