Wang Kaiyang, Gu Zhiyuan, Liu Shuai, Sun Wenzhao, Zhang Nan, Xiao Shumin, Song Qinghai
National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen 518055, China.
J Phys Chem Lett. 2016 Jul 7;7(13):2549-55. doi: 10.1021/acs.jpclett.6b01072. Epub 2016 Jun 22.
The realization of high density and highly uniform nanolaser arrays in lead halide perovskite is quite challenging, especially on silicon. Herein, we demonstrate a simple way to form lead halide nanolaser array on silicon chip with high density and uniform lasing wavelengths. By positioning a perovskite microwire onto a silicon grating, only the suspended parts can hold high quality (Q) resonances and generate laser emissions. As the perovskite microwire is periodically segmented by the silicon grating, the transverse lasers are divided into a periodic nanolaser array and the lasing wavelengths from different subunits are almost the same. The transverse laser has been observed in an air gap as narrow as 420 nm, increasing the density of nanolasers to about 1250 per millimeter (800 nm period in experiment). We believe this research shall shed light on the development of perovskite microlaser and nanolaser arrays on silicon and their applications.
在卤化铅钙钛矿中实现高密度且高度均匀的纳米激光阵列颇具挑战性，尤其是在硅片上。在此，我们展示了一种在硅芯片上形成具有高密度和均匀激光波长的卤化铅纳米激光阵列的简单方法。通过将钙钛矿微线放置在硅光栅上，只有悬空部分能够保持高品质（Q）共振并产生激光发射。由于钙钛矿微线被硅光栅周期性地分割，横向激光器被分成周期性的纳米激光阵列，并且来自不同子单元的激光波长几乎相同。在窄至420 nm的气隙中观察到了横向激光，将纳米激光器的密度提高到了约每毫米1250个（实验中周期为800 nm）。我们相信这项研究将为硅基钙钛矿微激光器和纳米激光阵列的发展及其应用提供启示。
