Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138634.
Adv Mater. 2016 Sep;28(34):7486-93. doi: 10.1002/adma.201601208. Epub 2016 Jun 23.
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.
对非晶态、亚化学计量氧化硅薄膜施加电场会导致惊人的结构变化，表现为密度变化、氧迁移，最终导致超氧离子的发射。这项基础研究的结果与越来越多地应用于一系列技术的材料直接相关，展示了随机氧化物网络在电场驱动下令人惊讶的局部重排程度。
