Department of Electronic and Electrical Engineering, UCL, London, UK.
Nanotechnology. 2012 Nov 16;23(45):455201. doi: 10.1088/0957-4484/23/45/455201. Epub 2012 Oct 12.
Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films. Our devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. We demonstrate different operational modes that make it possible to dynamically adjust device properties, in particular two highly desirable properties: nonlinearity and self-rectification. This can potentially enable high levels of device integration in passive crossbar arrays without causing the problem of leakage currents in common line semi-selected devices. Aspects of conduction and switching mechanisms are discussed, and scanning tunnelling microscopy (STM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments.
基于非化学计量比富硅氧化硅薄膜的阻变器件具有易于制备和增强器件性能等优点，为现有金属氧化物基阻变随机存取存储器 (ReRAM) 器件提供了一种极具吸引力的替代方案。我们报告了对基于非化学计量比富硅氧化硅薄膜的阻变器件的研究。我们的器件表现出多电平切换和电阻的模拟调制，以及标准的两电平切换。我们展示了不同的工作模式，这些模式使得动态调整器件特性成为可能，特别是两个非常理想的特性：非线性和自整流。这可能使无源交叉阵列中的器件集成水平达到很高，而不会导致常见线半选择器件中漏电流的问题。讨论了导电机理和开关机制的各个方面，扫描隧道显微镜 (STM) 测量提供了对导电丝的位置和尺寸的更详细的了解。
