Hu Wei, Zou Lilan, Chen Xinman, Qin Ni, Li Shuwei, Bao Dinghua
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou, Guangdong 510275, China.
ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5012-7. doi: 10.1021/am500048y. Epub 2014 Mar 25.
We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.
我们报道了非晶铟镓锌氧化物（a-IGZO）薄膜具有高度均匀的电阻开关特性。这些薄膜是通过低温光化学溶液沉积法制备的，该方法是一种将化学溶液沉积与紫外线（UV）辐照处理相结合的简单工艺。基于a-IGZO的电阻开关器件具有长保持时间、良好的耐久性、均匀的开关电压以及低电阻态和高电阻态的稳定分布。还基于电流-电压特性及其温度依赖性对导电机制进行了讨论。基于傅里叶变换红外光谱、X射线光电子能谱以及薄膜的场发射扫描电子显微镜分析，优异的电阻开关特性可归因于有机和氢基元素的减少以及由于紫外线辐照通过氢键形成增强的金属-氧化物键和金属-氢氧化物键网络。这项研究表明，a-IGZO薄膜在电阻式随机存取存储器中具有潜在应用，如果将a-IGZO电阻开关单元与a-IGZO薄膜晶体管集成，低温光化学溶液沉积法有望进一步实现面板上的系统应用。
