Zhou Yang, Yong Zi-Jun, Zhang Kai-Cheng, Liu Bo-Mei, Wang Zhao-Wei, Hou Jing-Shan, Fang Yong-Zheng, Zhou Yi, Sun Hong-Tao, Song Bo
College of Chemistry, Chemical Engineering and Materials Science, Soochow University , Suzhou 215123, China.
School of Materials Science and Engineering, Shanghai Institute of Technology , Shanghai 201418, China.
J Phys Chem Lett. 2016 Jul 21;7(14):2735-41. doi: 10.1021/acs.jpclett.6b01147. Epub 2016 Jul 6.
Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths.
通过引入外来原子对半导体进行掺杂，使其在微电子和光电子领域得到广泛应用。我们表明，这一策略可应用于直接带隙卤化铅钙钛矿，通过将铋（Bi）掺杂到卤化铅钙钛矿中，实现了在新波长下的超宽带光致发光（PL）。结构和光物理表征表明，PL源于一类Bi掺杂诱导的光学活性中心，这归因于扭曲的[PbI6]单元与空间局域化双极化子的耦合。此外，我们发现这些半导体的成分工程可作为一种额外的方法，用于合理调节掺杂钙钛矿的PL特性。最后，我们通过将该系统用作发光层，在低温下实现了电致发光，这标志着首个使用Bi掺杂光子材料的电驱动器件。我们的结果表明，低成本、储量丰富、可溶液加工的Bi掺杂钙钛矿半导体可能是开发在新波长下工作的光源的有前途的候选材料。
