用于增强光伏性能的CsPbBr量子点/多晶硅混合结构的降档和抗反射效应

Down-Shifting and Anti-Reflection Effect of CsPbBr Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties.

作者信息

Cao Yunqing, Wu Dong, Zhu Ping, Shan Dan, Zeng Xianghua, Xu Jun

机构信息

College of Physical Science and Technology, Yangzhou University, Yangzhou 225009, China.

National Laboratory of Solid State Microstructures and School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

出版信息

Nanomaterials (Basel). 2020 Apr 17;10(4):775. doi: 10.3390/nano10040775.

DOI:10.3390/nano10040775

PMID:32316489

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7221981/

Abstract

Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion efficiency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting effect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr QDs show a potential application of the down-shifting effect. CsPbBr QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr QDs/mc-Si solar cells have obvious improvement in external quantum efficiency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting effect and the anti-reflection property of CsPbBr QDs through the formation of CsPbBr QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%.

摘要

在过去几十年里，人们对基于硅（Si）的太阳能电池进行了广泛研究，由于太阳光谱不匹配，其功率转换效率（PCE）仍存在局限性。最近，一种降频转换效应为通过将紫外（UV）光子转换为可见光来提高电池性能提供了新途径。在这项工作中，合成了尺寸均匀为10 nm的溴化铯铅钙钛矿量子点（CsPbBr QDs）。CsPbBr QDs表现出对近紫外光的强吸收以及在515 nm处的强光致发光（PL）峰，显示出降频转换效应的潜在应用。制备并系统研究了CsPbBr QDs/多晶硅（mc-Si）混合结构太阳能电池。与mc-Si太阳能电池相比，CsPbBr QDs/mc-Si太阳能电池在300至500 nm和700至1100 nm波长范围内的外量子效率（EQE）有明显提高，这可归因于降频转换效应以及CsPbBr QDs通过形成CsPbBr QDs/mc-Si结构的抗反射特性。此外，还对接触电阻和界面缺陷进行了详细讨论。结果，将涂覆的CsPbBr QDs优化为两层，太阳能电池的最高PCE为14.52%。