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双层石墨烯中扭转角诱导的范霍夫奇点的电荷反转和拓扑相变。

Charge Inversion and Topological Phase Transition at a Twist Angle Induced van Hove Singularity of Bilayer Graphene.

机构信息

Max-Planck-Institut für Festköperforschung , 70569 Stuttgart, Germany.

New York University , Shanghai 200120, China.

出版信息

Nano Lett. 2016 Aug 10;16(8):5053-9. doi: 10.1021/acs.nanolett.6b01906. Epub 2016 Jul 11.

Abstract

van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical point the Fermi surface connectivity changes, and topological properties undergo a transition. Opportunities to systematically pass a VHS at the turn of a voltage knob and study its diverse impact are however rare. With the advent of van der Waals heterostructures, control over the atomic registry of neighboring graphene layers offers an unprecedented tool to generate a low energy VHS easily accessible with conventional gating. Here we have addressed magnetotransport when the chemical potential crosses the twist angle induced VHS in twisted bilayer graphene. A topological phase transition is experimentally disclosed in the abrupt conversion of electrons to holes or vice versa, a loss of a nonzero Berry phase and distinct sequences of integer quantum Hall states above and below the singularity.

摘要

在晶态固体的电子和热力学性质中,态密度中的 van Hove 奇点(VHS)起着重要而多样的作用。在临界点,费米表面的连通性发生变化,拓扑性质发生转变。然而,系统地在电压旋钮的转动处通过 VHS 并研究其多样影响的机会很少。随着范德瓦尔斯异质结构的出现,对相邻石墨烯层的原子配准的控制提供了一个前所未有的工具,可轻松产生易于通过常规门控访问的低能 VHS。在这里,我们研究了当化学势穿过扭曲双层石墨烯中扭转角诱导的 VHS 时的磁输运。实验中揭示了一个拓扑相变,即在电子到空穴或反之的突然转换中,零贝里相位的损失以及在奇点上方和下方整数量子霍尔态的不同序列。

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