• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

扭曲双/多层石墨烯中基质掺杂效应和非同寻常大角度范霍夫奇点演化。

Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

机构信息

Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK.

Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.

出版信息

Adv Mater. 2017 Jul;29(27). doi: 10.1002/adma.201606741. Epub 2017 May 8.

DOI:10.1002/adma.201606741
PMID:28481053
Abstract

Graphene has demonstrated great potential in new-generation electronic applications due to its unique electronic properties such as large carrier Fermi velocity, ultrahigh carrier mobility, and high material stability. Interestingly, the electronic structures can be further engineered in multilayer graphene by the introduction of a twist angle between different layers to create van Hove singularities (vHSs) at adjustable binding energy. In this work, using angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution, the band structures and their evolution are systematically studied with twist angle in bilayer and trilayer graphene sheets. A doping effect is directly observed in graphene multilayer system as well as vHSs in bilayer graphene over a wide range of twist angles (from 5° to 31°) with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is also observed in trilayer graphene. The large tuning range of vHS binding energy in twisted multilayer graphene provides a promising material base for optoelectrical applications with broadband wavelength selectivity from the infrared to the ultraviolet regime, as demonstrated by an example application of wavelength selective photodetector.

摘要

石墨烯由于其独特的电子特性,如大载流子费米速度、超高载流子迁移率和高材料稳定性,在新一代电子应用中显示出巨大的潜力。有趣的是,通过在不同层之间引入扭转角,可以进一步在多层石墨烯中设计电子结构,在可调谐的结合能处产生范霍夫奇点(vHS)。在这项工作中,我们使用具有亚微米空间分辨率的角分辨光发射谱,系统地研究了双层和三层石墨烯片层中扭转角的能带结构及其演化。在宽的扭转角范围内(从 5°到 31°),我们直接观察到了在石墨烯多层系统中的掺杂效应以及双层石墨烯中的 vHS,其可调谐能量范围很宽,超过 2eV。此外,我们还在三层石墨烯中观察到了多个 vHS(在不同的结合能处)的形成。在扭曲的多层石墨烯中,vHS 结合能的大范围可调谐为从红外到紫外波段的宽带波长选择性光电应用提供了有前景的材料基础,如波长选择性光探测器的应用实例所示。

相似文献

1
Substrate Doping Effect and Unusually Large Angle van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.扭曲双/多层石墨烯中基质掺杂效应和非同寻常大角度范霍夫奇点演化。
Adv Mater. 2017 Jul;29(27). doi: 10.1002/adma.201606741. Epub 2017 May 8.
2
Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from NanoARPES.利用纳米角分辨光电子能谱对扭曲双层石墨烯中电可调范霍夫奇点的观测
Adv Mater. 2020 Aug;32(31):e2001656. doi: 10.1002/adma.202001656. Epub 2020 Jun 11.
3
Building Large-Domain Twisted Bilayer Graphene with van Hove Singularity.构建具有范霍夫奇点的大畴扭曲双层石墨烯。
ACS Nano. 2016 Jul 26;10(7):6725-30. doi: 10.1021/acsnano.6b02046. Epub 2016 May 12.
4
Angle-dependent van Hove singularities in a slightly twisted graphene bilayer.角度相关的范霍夫奇点出现在稍微扭曲的双层石墨烯中。
Phys Rev Lett. 2012 Sep 21;109(12):126801. doi: 10.1103/PhysRevLett.109.126801. Epub 2012 Sep 17.
5
Selectively enhanced photocurrent generation in twisted bilayer graphene with van Hove singularity.在具有范霍夫奇点的扭曲双层石墨烯中选择性增强光电流产生。
Nat Commun. 2016 Mar 7;7:10699. doi: 10.1038/ncomms10699.
6
van Hove Singularity Enhanced Photochemical Reactivity of Twisted Bilayer Graphene.van Hove 奇点增强扭曲双层石墨烯的光化学反应性。
Nano Lett. 2015 Aug 12;15(8):5585-9. doi: 10.1021/acs.nanolett.5b02240. Epub 2015 Jul 8.
7
Van Hove Singularity-Enhanced Raman Scattering and Photocurrent Generation in Twisted Monolayer-Bilayer Graphene.扭曲单层-双层石墨烯中的范霍夫奇点增强拉曼散射和光电流产生
ACS Nano. 2024 Sep 10;18(36):25183-25192. doi: 10.1021/acsnano.4c07302. Epub 2024 Aug 29.
8
Evolution of the electronic band structure of twisted bilayer graphene upon doping.掺杂扭曲双层石墨烯的电子能带结构的演化。
Sci Rep. 2017 Aug 8;7(1):7611. doi: 10.1038/s41598-017-07580-3.
9
Charge Inversion and Topological Phase Transition at a Twist Angle Induced van Hove Singularity of Bilayer Graphene.双层石墨烯中扭转角诱导的范霍夫奇点的电荷反转和拓扑相变。
Nano Lett. 2016 Aug 10;16(8):5053-9. doi: 10.1021/acs.nanolett.6b01906. Epub 2016 Jul 11.
10
Coupling and Decoupling of Bilayer Graphene Monitored by Electron Energy Loss Spectroscopy.通过电子能量损失谱监测双层石墨烯的耦合与解耦
Nano Lett. 2021 Dec 22;21(24):10386-10391. doi: 10.1021/acs.nanolett.1c03689. Epub 2021 Dec 9.

引用本文的文献

1
Effect of Synthesis Conditions on Graphene Directly Grown on SiO: Structural Features and Charge Carrier Mobility.合成条件对直接生长在SiO上的石墨烯的影响:结构特征与电荷载流子迁移率
Nanomaterials (Basel). 2025 Aug 27;15(17):1315. doi: 10.3390/nano15171315.
2
Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene.在铜上化学气相沉积石墨烯过程中利用硅污染物:合成具有类似教科书式独立石墨烯能带结构的稳定材料。
ACS Appl Mater Interfaces. 2025 Jul 16;17(28):40937-40950. doi: 10.1021/acsami.5c06939. Epub 2025 Jul 2.
3
In Operando Angle-Resolved Photoemission Spectroscopy with Nanoscale Spatial Resolution: Spatial Mapping of the Electronic Structure of Twisted Bilayer Graphene.
具有纳米级空间分辨率的原位角分辨光电子能谱:扭曲双层石墨烯电子结构的空间映射
Small Sci. 2021 Mar 30;1(6):2000075. doi: 10.1002/smsc.202000075. eCollection 2021 Jun.
4
Unsupervised learning of spatially-resolved ARPES spectra for epitaxially grown graphene via non-negative matrix factorization.通过非负矩阵分解对外延生长石墨烯的空间分辨角分辨光电子能谱进行无监督学习。
Sci Rep. 2024 Oct 15;14(1):24200. doi: 10.1038/s41598-024-73795-w.
5
ARPES detection of superconducting gap sign in unconventional superconductors.角分辨光电子能谱对非常规超导体中超导能隙信号的探测。
Nat Commun. 2024 May 28;15(1):4538. doi: 10.1038/s41467-024-48610-9.
6
Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices.扭曲双层石墨烯器件电子结构中的层依赖相互作用效应
Nano Lett. 2023 Aug 9;23(15):6799-6806. doi: 10.1021/acs.nanolett.3c00253. Epub 2023 Jul 24.
7
ARPES Signatures of Few-Layer Twistronic Graphenes.少层扭曲双层石墨烯的 ARPES 谱特征。
Nano Lett. 2023 Jun 14;23(11):5201-5208. doi: 10.1021/acs.nanolett.3c01173. Epub 2023 May 26.
8
Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy.利用角分辨光电子能谱法测定二维晶体间的原子间耦合
Nat Commun. 2020 Jul 17;11(1):3582. doi: 10.1038/s41467-020-17412-0.
9
A Perspective on the Application of Spatially Resolved ARPES for 2D Materials.二维材料空间分辨角分辨光电子能谱应用透视
Nanomaterials (Basel). 2018 Apr 27;8(5):284. doi: 10.3390/nano8050284.