基于FeAl/PIN-PMN-PT结构中巨大且非易失性逆磁电效应的四态存储器。

Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.

作者信息

Wei Yanping, Gao Cunxu, Chen Zhendong, Xi Shibo, Shao Weixia, Zhang Peng, Chen Guilin, Li Jiangong

机构信息

Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.

Institute of Chemical &Engineering Sciences, Agency for Science, Technology and Research, Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore.

出版信息

Sci Rep. 2016 Jul 15;6:30002. doi: 10.1038/srep30002.

DOI:10.1038/srep30002

PMID:27417902

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4945947/

Abstract

We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

摘要

我们报道了一种新型FeAl/PIN-PMN-PT异质结构在室温下具有稳定、可调谐且非易失性的逆磁电效应（ME），其具有巨大的磁化电调制，最大相对磁化变化（ΔM/M）高达66%。PIN-PMN-PT中109°铁弹畴切换以及通过源自PIN-PMN-PT（011）表面的单轴各向异性与铁磁（FM）薄膜耦合是逆磁电效应的关键因素。我们在此还提出了一种新型的四态存储器，通过该存储器可以通过调整电场来改变剩余磁性状态。这项工作为未来高密度信息存储应用中实现低能耗的电写入磁读取提供了一种有益的方法。