Li Wei, Wang Shaolei, He Sufeng, Hu Mingyue, Ge Pengpeng, Wang Jing, Guo YanYan
J Nanosci Nanotechnol. 2016 Feb;16(2):1537-40. doi: 10.1166/jnn.2016.10857.
In this paper, we introduce an easy method for fabricating Si nanowires with nanodots using nanosphere lithography. First, a self-assembly ordered single layer of polystyrene nanospheres with a diameter of 220 nm was prepared on Si substrate. Secondly, the polystyrene spheres monolayer was etched by 02 with different time from 10 s to 35 s. After this etching process, the polystyrene nanowires between polystyrene spheres were fabrication. If the etching time was longer than 35 s, there were no polystyrene nanowires. Thereafter, the following etching process with carbon fluoride was performanced. The polystyrene nanowires and nanosphers were worked as masks. Finally, the Si nanowires with nanodots were formed. The size and morphology can be controlled by etching process. This technique for forming nanostructure arrays using nanosphere lithography can be applied in many areas of science and technology.
在本文中，我们介绍了一种使用纳米球光刻技术制造带有纳米点的硅纳米线的简便方法。首先，在硅衬底上制备了直径为220纳米的聚苯乙烯纳米球自组装有序单层。其次，用氧气对聚苯乙烯球单层进行10秒至35秒不同时间的蚀刻。经过此蚀刻过程后，聚苯乙烯球之间的聚苯乙烯纳米线被制造出来。如果蚀刻时间长于35秒，则不存在聚苯乙烯纳米线。此后，进行了用氟化碳的后续蚀刻过程。聚苯乙烯纳米线和纳米球用作掩膜。最后，形成了带有纳米点的硅纳米线。尺寸和形态可以通过蚀刻过程来控制。这种使用纳米球光刻技术形成纳米结构阵列的技术可应用于许多科学和技术领域。
