Department of Chemical Engineering, University of Florida , Gainesville, Florida 32611, United States.
Department of Materials Science & Engineering, University of Florida , Gainesville, Florida 32611, United States.
ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7368-7375. doi: 10.1021/acsami.6b09959. Epub 2017 Feb 14.
A tunable nanosphere lithography (NSL) technique is combined with metal-assisted etching of silicon (Si) to fabricate ordered, high-aspect-ratio Si nanowires. Non-close-packed structures are directly prepared via shear-induced ordering of the nanospheres. The spacing between the nanospheres is independent of their diameters and tuned by changing the loading of nanospheres. Nanowires with spacings between 110 and 850 nm are easily achieved with diameters between 100 and 550 nm. By eliminating plasma or heat treatment of the nanospheres, the diameter of the nanowires fabricated is nearly identical to the nanosphere diameter in the suspension. The elimination of this step helps avoid common drawbacks of traditional NSL approaches, leading to the high-fidelity, large-scale fabrication of highly crystalline, nonporous Si nanowires in ordered hexagonal patterns. The ability to simultaneously control the diameter and spacing makes the NSL technique more versatile and expands the range of geometries that can be fabricated by top-down approaches.
一种可调谐的纳米球光刻（NSL）技术与硅（Si）的金属辅助刻蚀相结合，用于制造有序的、高纵横比的 Si 纳米线。非密堆积结构通过纳米球的剪切诱导有序直接制备。纳米球的间距不依赖于其直径，通过改变纳米球的负载量进行调节。具有 110nm 至 850nm 间距和 100nm 至 550nm 直径的纳米线很容易实现。通过消除纳米球的等离子体或热处理，所制备的纳米线的直径几乎与悬浮液中纳米球的直径相同。消除这一步骤有助于避免传统 NSL 方法的常见缺点，从而以高保真度、大规模制造有序六方图案的高结晶、无孔 Si 纳米线。同时控制直径和间距的能力使 NSL 技术更加通用，并扩展了可以通过自上而下方法制造的几何形状的范围。
