Mokkapati S, Jagadish C
Opt Express. 2016 Jul 25;24(15):17345-58. doi: 10.1364/OE.24.017345.
III-V semiconductor nanowires behave as optical antennae because of their shape anisotropy and high refractive index. The antennae like behavior modifies the absorption and emission properties of nanowires compared to planar materials. Nanowires absorb light more efficiently compared to an equivalent volume planar material, leading to higher short circuit current densities. The modified emission from the nanowires has the potential to increase the open circuit voltage from nanowire solar cells compared to planar solar cells. In order to achieve high efficiency nanowire solar cells it is essential to control the surface state density and doping in nanowires. We review the physics of nanowire solar cells and progress made in addressing the surface recombination and doping of nanowires, with emphasis on GaAs and InP materials.
III-V族半导体纳米线由于其形状各向异性和高折射率而表现得像光学天线。与平面材料相比，这种类似天线的行为改变了纳米线的吸收和发射特性。与同等体积的平面材料相比，纳米线能更有效地吸收光，从而导致更高的短路电流密度。与平面太阳能电池相比，纳米线经修饰后的发射有潜力提高纳米线太阳能电池的开路电压。为了实现高效的纳米线太阳能电池，控制纳米线中的表面态密度和掺杂至关重要。我们综述了纳米线太阳能电池的物理原理以及在解决纳米线的表面复合和掺杂方面所取得的进展，重点是GaAs和InP材料。
