Huang Biqin, Bai Xiwei, Lam Stephen K, Tsang Kenneth K
HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA.
Sci Rep. 2018 Feb 15;8(1):3063. doi: 10.1038/s41598-018-20803-5.
In this letter we report the first diamond fin field-effect transistor (diamond FinFET) without a hydrogen-terminated channel. The device operates with hole accumulation by metal-oxide-semiconductor (MOS) structures built on fins to maintain effective control of the channel conduction. Devices with 100-nm-wide fins were designed and fabricated to ensure that the channel pinched off at zero gate bias. The transfer characteristic of FinFET showed a greater than 3000 on/off ratio, successfully demonstrating the transistor behavior. Devices were characterized at room temperature and at 150 °C, showing 30 mA/mm current density at 150 °C, 35 times more than current density at room temperature. The diamond FinFET, which leverages the fin concept from the silicon industry and the material advance of diamond, enables a new class of diamond transistors for applications from digital to power and radio frequency (RF) electronics.
在本信函中，我们报道了首个无氢终止沟道的金刚石鳍式场效应晶体管（金刚石鳍式场效应晶体管）。该器件通过在鳍片上构建的金属氧化物半导体（MOS）结构进行空穴积累来工作，以维持对沟道传导的有效控制。设计并制造了鳍片宽度为100纳米的器件，以确保沟道在零栅极偏压下夹断。鳍式场效应晶体管的转移特性显示出大于3000的开/关比，成功证明了晶体管行为。器件在室温及150°C下进行了表征，在150°C下显示出30 mA/mm的电流密度，是室温下电流密度的35倍。金刚石鳍式场效应晶体管利用了硅产业的鳍片概念和金刚石的材料优势，为从数字到功率及射频（RF）电子学的应用带来了一类新型的金刚石晶体管。
