Oi Nobutaka, Inaba Masafumi, Okubo Satoshi, Tsuyuzaki Ikuto, Kageura Taisuke, Onoda Shinobu, Hiraiwa Atsushi, Kawarada Hiroshi
Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo, 169-8555, Japan.
Research Organization for Nano & Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku-ku, Tokyo, 162-0041, Japan.
Sci Rep. 2018 Jul 13;8(1):10660. doi: 10.1038/s41598-018-28837-5.
Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with trench structures and drain current densities equivalent to those of n-channel wide bandgap devices for complementary inverters. We use two-dimensional hole gases induced by atomic layer deposited AlO for the channel and drift layers, irrespective of their crystal orientations. The source and gate are on the planar surface, the drift layer is mainly on the sidewall and the drain is the p substrate. The maximum drain current density exceeds 200 mA mm at a 12 µm source-drain distance. On/off ratios of over eight orders of magnitude are demonstrated and the drain current reaches the lower measurement limit in the off-state at room temperature using a nitrogen-doped n-type blocking layer formed using ion implantation and epitaxial growth.
功率半导体器件需要同时具备低导通电阻和高击穿电压。垂直型金属氧化物半导体场效应晶体管（MOSFET）满足这些要求，但在金刚石中仍存在不足。在此，我们展示了具有沟槽结构的垂直型p沟道金刚石MOSFET，其漏极电流密度与用于互补逆变器的n沟道宽带隙器件相当。我们使用原子层沉积的AlO诱导的二维空穴气作为沟道和漂移层，而不考虑其晶体取向。源极和栅极位于平面表面，漂移层主要位于侧壁，漏极是p型衬底。在源漏距离为12 µm时，最大漏极电流密度超过200 mA mm 。利用离子注入和外延生长形成的氮掺杂n型阻挡层，展示了超过八个数量级的开/关比，并且在室温下关态时漏极电流达到较低的测量极限。
