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在碳化硅上垂直生长的二硫化钼三角形的合成

Synthesis of Vertically Standing MoS2 Triangles on SiC.

作者信息

Lan Feifei, Lai Zhanping, Xu Yongkuan, Cheng Hongjuan, Wang Zaien, Qi Chengjun, Chen Jianli, Zhang Song

机构信息

Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.

出版信息

Sci Rep. 2016 Aug 23;6:31980. doi: 10.1038/srep31980.

DOI:10.1038/srep31980
PMID:27550237
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4994075/
Abstract

Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.

摘要

层状材料二硫化钼（MoS2）因其优异的电学性能和催化性能而备受关注。在此，我们报告通过快速硫化过程在碳化硅（SiC）上合成垂直站立的二硫化钼三角形。这种边缘终止的薄膜是二硫化钼的亚稳结构，可能在鳍式场效应晶体管（FinFET）和催化反应中得到应用。我们已经在析氢反应（HER）中证实了其催化性能。塔菲尔斜率约为54mV/十倍频程。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/91dadab32258/srep31980-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/d538bd1d9c6c/srep31980-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/a368131b9154/srep31980-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/cbc2b42a4a05/srep31980-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/080c8e25324d/srep31980-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/fc5af7977ef3/srep31980-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/91dadab32258/srep31980-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/d538bd1d9c6c/srep31980-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/a368131b9154/srep31980-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/cbc2b42a4a05/srep31980-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/080c8e25324d/srep31980-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/fc5af7977ef3/srep31980-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b968/4994075/91dadab32258/srep31980-f6.jpg

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本文引用的文献

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2
In situ fabrication of porous MoS2 thin-films as high-performance catalysts for electrochemical hydrogen evolution.原位制备多孔 MoS2 薄膜作为电化学析氢的高性能催化剂。
Chem Commun (Camb). 2013 Sep 4;49(68):7516-8. doi: 10.1039/c3cc44143a.
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Synthesis of MoS2 and MoSe2 films with vertically aligned layers.MoS2 和 MoSe2 薄膜的垂直分层合成。
衬底对称性对化学气相沉积法合成的MoS薄膜枝晶形态的影响。
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Channel length scaling of MoS2 MOSFETs.MoS2 MOSFET 的沟道长度缩放。
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A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.二硫化钼/碳纳米管异质互补逆变器。
Nanotechnology. 2012 Aug 24;23(33):335203. doi: 10.1088/0957-4484/23/33/335203. Epub 2012 Aug 3.
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Graphene oxide as a highly selective substrate to synthesize a layered MoS2 hybrid electrocatalyst.氧化石墨烯作为一种高选择性的基底来合成层状 MoS2 混合电催化剂。
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A molecular MoS₂ edge site mimic for catalytic hydrogen generation.一种用于催化产氢的分子 MoS₂ 边缘位点模拟物。
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