NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing, Department of Mechanical and Industrial Engineering, Northeastern University, Boston MA 02115, USA.
Nanotechnology. 2012 Aug 24;23(33):335203. doi: 10.1088/0957-4484/23/33/335203. Epub 2012 Aug 3.
We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.
我们报告了一种简单的自下而上/自上而下的方法，用于将截然不同的纳米级构建块集成在一起，形成基于分层二硫化钼和碳纳米管（CNT）束的异质互补反相器电路。所制造的 CNT/MoS2 反相器由 n 型二硫化钼（MoS2）和 p 型 CNT 晶体管组成，具有 1.3 的高电压增益。CNT 通道采用定向组装制造，而分层二硫化钼通道则采用机械剥落制造。这种将具有独特特性的各种纳米级元件集成在一起的自下而上的制造方法为互补金属氧化物半导体提供了一种具有成本效益的替代方法，为实现高性能逻辑电路奠定了基础。
