Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.
Resnick Sustainability Institute, California Institute of Technology , Pasadena, California 91125, United States.
Nano Lett. 2016 Sep 14;16(9):5482-7. doi: 10.1021/acs.nanolett.6b01914. Epub 2016 Aug 31.
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
我们使用厚度小于 15nm 的钼和钨的过渡金属二卤化物（TMDC）作为范德华半导体活性层，展示了近 100%宽带吸收的光电设备。具体来说，我们报告说，通过与半导体/金属异质结构的强阻尼光学模式耦合，在非常薄的（<15nm）范德华半导体结构中实现近 100%的光吸收是可能的。我们进一步使用这些高吸收异质结构制造肖特基结器件，并对其光电性能进行了表征。我们的工作满足了使 TMDC 成为实现高光电器件效率的潜在候选材料的关键标准之一。
