Suppr超能文献

多晶催化剂箔上原位石墨烯生长动力学

In Situ Graphene Growth Dynamics on Polycrystalline Catalyst Foils.

作者信息

Weatherup Robert S, Shahani Ashwin J, Wang Zhu-Jun, Mingard Ken, Pollard Andrew J, Willinger Marc-Georg, Schloegl Robert, Voorhees Peter W, Hofmann Stephan

机构信息

Department of Engineering, University of Cambridge , Cambridge CB3 0FA, United Kingdom.

Materials Sciences Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley California 94720, United States.

出版信息

Nano Lett. 2016 Oct 12;16(10):6196-6206. doi: 10.1021/acs.nanolett.6b02459. Epub 2016 Sep 7.

Abstract

The dynamics of graphene growth on polycrystalline Pt foils during chemical vapor deposition (CVD) are investigated using in situ scanning electron microscopy and complementary structural characterization of the catalyst with electron backscatter diffraction. A general growth model is outlined that considers precursor dissociation, mass transport, and attachment to the edge of a growing domain. We thereby analyze graphene growth dynamics at different length scales and reveal that the rate-limiting step varies throughout the process and across different regions of the catalyst surface, including different facets of an individual graphene domain. The facets that define the domain shapes lie normal to slow growth directions, which are determined by the interfacial mobility when attachment to domain edges is rate-limiting, as well as anisotropy in surface diffusion as diffusion becomes rate-limiting. Our observations and analysis thus reveal that the structure of CVD graphene films is intimately linked to that of the underlying polycrystalline catalyst, with both interfacial mobility and diffusional anisotropy depending on the presence of step edges and grain boundaries. The growth model developed serves as a general framework for understanding and optimizing the growth of 2D materials on polycrystalline catalysts.

摘要

利用原位扫描电子显微镜以及电子背散射衍射对催化剂进行的补充结构表征,研究了化学气相沉积(CVD)过程中多晶铂箔上石墨烯的生长动力学。概述了一个通用的生长模型,该模型考虑了前驱体解离、质量传输以及在生长域边缘的附着。我们据此分析了不同长度尺度下的石墨烯生长动力学,并揭示了限速步骤在整个过程以及催化剂表面的不同区域(包括单个石墨烯域的不同晶面)都会发生变化。定义域形状的晶面垂直于缓慢生长方向,当附着到域边缘成为限速步骤时,缓慢生长方向由界面迁移率决定,而当扩散成为限速步骤时,则由表面扩散的各向异性决定。因此,我们的观察和分析表明,CVD石墨烯薄膜的结构与下层多晶催化剂的结构密切相关,界面迁移率和扩散各向异性都取决于台阶边缘和晶界的存在。所建立的生长模型为理解和优化二维材料在多晶催化剂上的生长提供了一个通用框架。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4f78/5064306/4ed82c03ba5d/nl-2016-02459x_0002.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验