Liu Xinke, Hu Shengqun, Luo Jiangliu, Li Xiaohua, Wu Jing, Chi Dongzhi, Ang Kah-Wee, Yu Wenjie, Cai Yongqing
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, China.
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
Small. 2021 Oct;17(43):e2100246. doi: 10.1002/smll.202100246. Epub 2021 Apr 4.
The introduction of patterned sapphire substrates (PSS) has been regarded as an effective method to improve the photoelectric performance of 2D layered materials in recent years. Molybdenum disulfide (MoS ), an intriguing transition metal 2D materials with splendid photoresponse owing to a direct-indirect bandgap transition at monolayer, shows promising optoelectronics applications. Here, a large-scale, continuous multilayer MoS film is prepared on a SiO /Si substrate and transferred to flat sapphire substrate and PSS, respectively. An enhanced dynamic distribution of local electric field and concentrated photon excitons across the interface between MoS and patterned sapphire substrates are revealed by the finite-difference time-domain simulation. The photoelectric performance of the MoS /PSS photodetector is improved under the three lasers of 365, 460, and 660 nm. Under the 365 nm laser, the photocurrent increased by 3 times, noise equivalent power (NEP) decreases to 1.77 × 10 W/Hz and specific detectivity (D*) increases to 1.2 × 10 Jones. Meanwhile, the responsivity is increased by 7 times at 460 nm, and the response time of the MoS /PSS photodetector is also shortened under three wavelengths. The work demonstrates an effective method for enhancing the optical properties of photodetectors and enabling simultaneous detection of broad-spectrum emissions.
近年来,图案化蓝宝石衬底(PSS)的引入被视为提高二维层状材料光电性能的有效方法。二硫化钼(MoS₂)是一种有趣的过渡金属二维材料,由于其单层时具有直接-间接带隙跃迁,因而具有出色的光响应,展现出了广阔的光电子应用前景。在此,在SiO₂/Si衬底上制备了大规模、连续的多层MoS₂薄膜,并分别转移到平坦蓝宝石衬底和图案化蓝宝石衬底上。通过时域有限差分模拟揭示了MoS₂与图案化蓝宝石衬底界面处局部电场的增强动态分布以及光子激子的集中。在365、460和660 nm这三种激光下,MoS₂/PSS光电探测器的光电性能得到了改善。在365 nm激光下,光电流增加了3倍,噪声等效功率(NEP)降至1.77×10⁻¹² W/Hz,比探测率(D*)增至1.2×10¹¹ Jones。同时,在460 nm处响应率提高了7倍,并且在三种波长下MoS₂/PSS光电探测器的响应时间也缩短了。这项工作展示了一种增强光电探测器光学性能并实现同时检测广谱发射的有效方法。