掺硼 TiO2 体相薄膜：常压化学气相沉积 TiO2 涂层中硼的显著作用。
Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.
机构信息
Materials Chemistry Research Centre, Department of Chemistry, University College London , 20 Gordon Street, London WC1H 0AJ, United Kingdom.
Department of Materials Research and Technology, Luxembourg Institute of Science and Technology , 5 Avenue des Hauts-Fourneaux, Esch-sur-Alzette L-4362, Luxembourg.
出版信息
ACS Appl Mater Interfaces. 2016 Sep 28;8(38):25024-9. doi: 10.1021/acsami.6b09560. Epub 2016 Sep 15.
The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.
本文介绍了通过常压化学气相沉积（APCVD）制备透明间隙硼掺杂 TiO2 薄膜的方法。X 射线光电子能谱（XPS）和 X 射线衍射（XRD）表明，硼对 TiO2 的间隙掺杂不仅提高了 TiO2 薄膜的结晶度，而且显著提高了其光催化活性。这种非常适合卷对卷工艺的合成方法只需一步即可完成。
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