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锗表面镀金的高度有序自组织光栅状纳米结构:Kelvin 探针力显微镜和导电原子力显微镜研究。

Gold-decorated highly ordered self-organized grating-like nanostructures on Ge surface: Kelvin probe force microscopy and conductive atomic force microscopy studies.

机构信息

SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar-751 005, India.

出版信息

Nanotechnology. 2016 Oct 28;27(43):435302. doi: 10.1088/0957-4484/27/43/435302. Epub 2016 Sep 22.

DOI:10.1088/0957-4484/27/43/435302
PMID:27655211
Abstract

Nanoarchitecture by atomic manipulation is considered to be one of the emerging trends in advanced functional materials. It has a gamut of applications to offer in nanoelectronics, chemical sensing, and nanobiological science. In particular, highly ordered one-dimensional semiconductor nanostructures fabricated by self-organization methods are in high demand for their high aspect ratios and large number of applications. An efficient way of fabricating semiconductor nanostructures is by molecular beam epitaxy, where atoms are added to a crystalline surface at an elevated temperature during growth, yielding the desired structures in a self-assembled manner. In this article, we offer a room temperature process, in which atoms are sputtered away by ion impacts. Using gold ion implantation, the present study reports on the formation of highly ordered self-organized long grating-like nanostructures, with grooves between them, on a germanium surface. The ridges of the patterns are shown to have flower-like protruding nanostructures, which are mostly decorated by gold atoms. By employing local probe microscopic techniques like Kelvin probe force microscopy and conductive atomic force microscopy, we observe a spatial variation in the work function and different nanoscale electrical conductivity on the ridges of the patterns and the grooves between them, which can be attributed to gold atom decorated ridges. Thus, the architecture  presented offers the advantage of using the patterned germanium substrates as periodic arrays of conducting ridges and poorly conducting grooves between them.

摘要

原子操纵的纳米结构被认为是先进功能材料的新兴趋势之一。它在纳米电子学、化学传感和纳米生物科学方面具有广泛的应用。特别是,通过自组织方法制备的高度有序的一维半导体纳米结构因其高纵横比和大量应用而受到高度需求。一种有效的制造半导体纳米结构的方法是分子束外延,其中在生长过程中,原子在高温下被添加到晶体表面,以自组装的方式产生所需的结构。在本文中,我们提供了一种在室温下进行的工艺,其中原子通过离子冲击而溅射掉。使用金离子注入,本研究报告了在锗表面上形成高度有序的自组织长光栅状纳米结构,其间有凹槽。图案的脊部显示出具有花状突出纳米结构的,这些纳米结构主要由金原子装饰。通过使用局部探针显微镜技术,如 Kelvin 探针力显微镜和导电原子力显微镜,我们观察到图案的脊部和其间的凹槽上的功函数和不同纳米尺度电导率的空间变化,这可以归因于金原子装饰的脊部。因此,所提出的结构具有使用图案化锗衬底作为周期性的导电脊阵列和其间的不良导电凹槽的优势。

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