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原子钝化的CdSe/ZnS量子点发光器件中的高效激子生成

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices.

作者信息

Kang Byoung-Ho, Lee Jae-Sung, Lee Sang-Won, Kim Sae-Wan, Lee Jun-Woo, Gopalan Sai-Anand, Park Ji-Sub, Kwon Dae-Hyuk, Bae Jin-Hyuk, Kim Hak-Rin, Kang Shin-Won

机构信息

Center for Functional Devices Fusion Platform, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.

School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.

出版信息

Sci Rep. 2016 Sep 30;6:34659. doi: 10.1038/srep34659.

DOI:10.1038/srep34659
PMID:27686147
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5043346/
Abstract

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br) in cetyl trimethylammonium bromide (CTAB). The Br ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.

摘要

我们展示了首次使用十六烷基三甲基溴化铵(CTAB)中的溴离子(Br)对绿色CdSe/ZnS量子点(QDs)进行表面改性。Br离子减小了量子点之间的粒子间距,并在量子点发光器件(QLEDs)中诱导了有效的电荷平衡。由于发射猝灭效应降低以及薄膜形态得到改善,所制备的QLEDs表现出高效的电荷注入。结果,它们表现出71,000 cd/m的最大亮度和6.4 cd/A的外部电流效率,两者均明显优于具有油酸表面配体的同类产品。此外,由于量子点表面的离子钝化,基于Br处理的量子点的QLEDs的寿命显著提高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/97cfb83b698c/srep34659-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/54b5188ff130/srep34659-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/c95d71c629fa/srep34659-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/0e48e99662f2/srep34659-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/818f487568fd/srep34659-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/295199ca03b9/srep34659-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/97cfb83b698c/srep34659-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/54b5188ff130/srep34659-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/c95d71c629fa/srep34659-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/0e48e99662f2/srep34659-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/818f487568fd/srep34659-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/295199ca03b9/srep34659-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ba5c/5043346/97cfb83b698c/srep34659-f6.jpg

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本文引用的文献

1
Impact of Different Surface Ligands on the Optical Properties of PbS Quantum Dot Solids.不同表面配体对硫化铅量子点固体光学性质的影响
Materials (Basel). 2015 Apr 21;8(4):1858-1870. doi: 10.3390/ma8041858.
2
The Influence of Doping on the Optoelectronic Properties of PbS Colloidal Quantum Dot Solids.掺杂对硫化铅胶体量子点固体光电性能的影响。
Sci Rep. 2016 Jan 8;6:18735. doi: 10.1038/srep18735.
3
High-efficiency, low turn-on voltage blue-violet quantum-dot-based light-emitting diodes.高效、低开启电压的蓝紫光量子点发光二极管。
量子点发光二极管的空穴传输能力及器件性能的改善
Nanoscale Adv. 2019 Nov 21;2(1):401-407. doi: 10.1039/c9na00618d. eCollection 2020 Jan 22.
4
High efficiency blue light-emitting devices based on quantum dots with core-shell structure design and surface modification.基于具有核壳结构设计和表面修饰的量子点的高效蓝光发射器件。
RSC Adv. 2021 Apr 14;11(23):14047-14052. doi: 10.1039/d0ra10173g. eCollection 2021 Apr 13.
5
An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device.一种基于有机/无机纳米材料和纳米晶体量子点的多级电阻式存储器件。
Nanomaterials (Basel). 2021 Nov 9;11(11):3004. doi: 10.3390/nano11113004.
6
Air-stable and ultrasensitive solution-cast SWIR photodetectors utilizing modified core/shell colloidal quantum dots.利用改性核/壳胶体量子点的空气稳定且超灵敏的溶液浇铸型短波红外光电探测器。
Nano Converg. 2020 Aug 17;7(1):28. doi: 10.1186/s40580-020-00238-3.
7
Al atomistic surface modulation on colloidal gradient quantum dots for high-brightness and stable light-emitting devices.用于高亮度和稳定发光器件的胶体梯度量子点上的铝原子表面调制
Sci Rep. 2019 Apr 23;9(1):6357. doi: 10.1038/s41598-019-42925-0.
Nano Lett. 2015 Feb 11;15(2):1211-6. doi: 10.1021/nl504328f. Epub 2015 Jan 13.
4
Influence of shell thickness on the performance of light-emitting devices based on CdSe/Zn1-X CdX S core/shell heterostructured quantum dots.壳层厚度对基于 CdSe/Zn1-X CdX S 核/壳结构量子点的发光器件性能的影响。
Adv Mater. 2014 Dec 17;26(47):8034-40. doi: 10.1002/adma.201403620. Epub 2014 Nov 10.
5
Colloidal nanocrystals with inorganic halide, pseudohalide, and halometallate ligands.具有无机卤化物、拟卤化物和卤金属配合物配体的胶体纳米晶体。
ACS Nano. 2014 Jul 22;8(7):7359-69. doi: 10.1021/nn502470v. Epub 2014 Jul 8.
6
Energy level modification in lead sulfide quantum dot thin films through ligand exchange.通过配体交换修饰硫化铅量子点薄膜的能级。
ACS Nano. 2014 Jun 24;8(6):5863-72. doi: 10.1021/nn500897c. Epub 2014 Jun 3.
7
Over 40 cd/A efficient green quantum dot electroluminescent device comprising uniquely large-sized quantum dots.包含独特大尺寸量子点的 40 cd/A 以上高效绿光量子点电致发光器件。
ACS Nano. 2014 May 27;8(5):4893-901. doi: 10.1021/nn500852g. Epub 2014 Apr 25.
8
Inorganic halogen ligands in quantum dots: I-, Br-, Cl- and film fabrication through electrophoretic deposition.量子点中的无机卤素配体:I-、Br-、Cl- 和通过电泳沉积制备的薄膜。
Phys Chem Chem Phys. 2013 Dec 7;15(45):19595-600. doi: 10.1039/c3cp52678j. Epub 2013 Aug 20.
9
Highly efficient blue-green quantum dot light-emitting diodes using stable low-cadmium quaternary-alloy ZnCdSSe/ZnS core/shell nanocrystals.使用稳定的低镉四元合金 ZnCdSSe/ZnS 核/壳纳米晶体的高效蓝绿光量子点发光二极管。
ACS Appl Mater Interfaces. 2013 May 22;5(10):4260-5. doi: 10.1021/am400433y. Epub 2013 May 13.
10
Quantitative analysis of the coverage density of Br- ions on Pd{100} facets and its role in controlling the shape of Pd nanocrystals.定量分析 Br- 离子在 Pd{100} 晶面上的覆盖密度及其在控制 Pd 纳米晶形状中的作用。
J Am Chem Soc. 2013 Mar 13;135(10):3780-3. doi: 10.1021/ja400301k. Epub 2013 Mar 4.