原子钝化的CdSe/ZnS量子点发光器件中的高效激子生成

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices.

作者信息

Kang Byoung-Ho, Lee Jae-Sung, Lee Sang-Won, Kim Sae-Wan, Lee Jun-Woo, Gopalan Sai-Anand, Park Ji-Sub, Kwon Dae-Hyuk, Bae Jin-Hyuk, Kim Hak-Rin, Kang Shin-Won

机构信息

Center for Functional Devices Fusion Platform, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.

School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea.

出版信息

Sci Rep. 2016 Sep 30;6:34659. doi: 10.1038/srep34659.

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br) in cetyl trimethylammonium bromide (CTAB). The Br ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface.