Qian Kai, Cai Guofa, Nguyen Viet Cuong, Chen Tupei, Lee Pooi See
School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
ACS Appl Mater Interfaces. 2016 Oct 19;8(41):27885-27891. doi: 10.1021/acsami.6b08154. Epub 2016 Oct 5.
Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.
透明非易失性存储器在集成透明电子学中具有巨大潜力。在此，我们展示了一种高度透明的电阻式开关存储器，它使用通过阴极电沉积法制备的化学计量比WO薄膜，并搭配氧化铟锡电极。该存储器件具有良好的光学透过率、出色的操作均匀性、低工作电压（+0.25 V / -0.42 V）以及长保持时间（>10 s）。导电原子力显微镜、非原位透射电子显微镜和X射线光电子能谱实验直接证实，电阻式开关效应是由于电场诱导在两个电极之间形成和湮灭富钨导电通道所致。关于导电细丝物理和化学性质的信息为具有优异性能的电阻式开关存储器提供了有见地的设计策略。此外，我们展示了阴极电沉积法在未来电阻式存储器件中的广阔应用前景。
