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赝电容钠离子存储助力自分支二维层状金属硫属化物纳米阵列的高倍率和面积容量。

Pseudocapacitive Na-Ion Storage Boosts High Rate and Areal Capacity of Self-Branched 2D Layered Metal Chalcogenide Nanoarrays.

机构信息

School of Physical and Mathematical Sciences, Nanyang Technological University , 637371, Singapore.

College of Optical and Electronic Technology, China Jiliang University , Hangzhou 310038, China.

出版信息

ACS Nano. 2016 Nov 22;10(11):10211-10219. doi: 10.1021/acsnano.6b05566. Epub 2016 Oct 25.

Abstract

The abundant reserve and low cost of sodium have provoked tremendous evolution of Na-ion batteries (SIBs) in the past few years, but their performances are still limited by either the specific capacity or rate capability. Attempts to pursue high rate ability with maintained high capacity in a single electrode remains even more challenging. Here, an elaborate self-branched 2D SnS (B-SnS) nanoarray electrode is designed by a facile hot bath method for Na storage. This interesting electrode exhibits areal reversible capacity of ca. 3.7 mAh cm (900 mAh g) and rate capability of 1.6 mAh cm (400 mAh g) at 40 mA cm (10 A g). Improved extrinsic pseudocapacitive contribution is demonstrated as the origin of fast kinetics of an alloying-based SnS electrode. Sodiation dynamics analysis based on first-principles calculations, ex-situ HRTEM, in situ impedance, and in situ Raman technologies verify the S-edge effect on the fast Na migration and reversible and sensitive structure evolution during high-rate charge/discharge. The excellent alloying-based pseudocapacitance and unsaturated edge effect enabled by self-branched surface nanoengineering could be a promising strategy for promoting development of SIBs with both high capacity and high rate response.

摘要

在过去的几年中,由于钠储量丰富且成本低廉,钠离子电池(SIBs)得到了迅猛发展,但它们的性能仍然受到比容量或倍率性能的限制。在单一电极中追求高倍率能力的同时保持高容量,这一目标仍然极具挑战性。在此,我们通过简便的热浴法设计了一种精细的自分支二维 SnS(B-SnS)纳米阵列电极,用于钠离子存储。该有趣的电极在 40 mA cm(10 A g)下具有约 3.7 mAh cm(900 mAh g)的面积可逆容量和 1.6 mAh cm(400 mAh g)的倍率性能。基于第一性原理计算、原位高分辨 TEM、原位阻抗和原位拉曼技术的钠化动力学分析验证了 S 边效应对快速 Na 迁移和高倍率充放电过程中可逆和敏感结构演化的影响。自分支表面纳米工程实现的合金化赝电容和不饱和边缘效应,为开发兼具高容量和高倍率响应的 SIBs 提供了一种很有前景的策略。

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