State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, China.
School of Chemical Engineering and Light Industry, Guangdong University of Technology , Guangzhou, Guangdong 510006, China.
J Am Chem Soc. 2017 Feb 1;139(4):1360-1363. doi: 10.1021/jacs.6b08511. Epub 2016 Nov 7.
Recently, the emergence of conductive metal-organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air-liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm V s, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.
最近，导电金属有机骨架（MOFs）的出现为其在电子设备中作为活性材料的应用带来了广阔的前景。在这项工作中，通过气-液界面生长法制备了高质量的、独立的导电 MOF 膜。相应地，首次成功制备了具有结晶微孔 MOF 沟道层的场效应晶体管（FET）。多孔 FET 表现出 p 型行为、可区分的开/关比以及高达 48.6 cm V s 的优异的场效应空穴迁移率，甚至可与报道的最高值相媲美溶液处理的有机或无机 FETs。
