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重新审视一些用于热电的硫族化物。

Revisiting some chalcogenides for thermoelectricity.

作者信息

Maignan Antoine, Guilmeau Emmanuel, Gascoin Franck, Bréard Yohann, Hardy Vincent

机构信息

Laboratoire CRISMAT, UMR 6508 CNRS/ENSICAEN, 6 bd du Maréchal Juin F-14050 CAEN Cedex 4, France.

出版信息

Sci Technol Adv Mater. 2012 Nov 20;13(5):053003. doi: 10.1088/1468-6996/13/5/053003. eCollection 2012 Oct.

Abstract

Thermoelectric materials that are efficient well above ambient temperature are needed to convert waste-heat into electricity. Many thermoelectric oxides were investigated for this purpose, but their power factor (PF) values were too small (∼10 W m K) to yield a satisfactory figure of merit . Changing the anions from O to S and then to Se is a way to increase the covalency. In this review, some examples of sulfides (binary Cr-S or derived from layered TiS) and an example of selenides, AgCrSe, have been selected to illustrate the characteristic features of their physical properties. The comparison of the only two semiconducting binary chromium sulfides and of a layered AgCrSe selenide shows that the PF values are also in the same order of magnitude as those of transition metal oxides. In contrast, the PF values of the layered sulfides TiS and CuTiS are higher, reaching ∼10 W m K. Apparently the magnetism related to the Cr-S network is detrimental for the PF when compared to the d character of the Ti based sulfides. Finally, the very low PF in AgCrSe (PF = 2.25 × 10 W m K at 700 K) is compensated by a very low thermal conductivity ( = 0.2 W m K from the measured C) leading to the highest value among the reviewed compounds ( = 0.8). The existence of a glassy-like state for the Ag cations above 475 K is believed to be responsible for this result. This result demonstrates that the phonon engineering in open frameworks is a very interesting way to generate efficient thermoelectric materials.

摘要

需要高效的热电材料在远高于环境温度的情况下将废热转化为电能。为此人们研究了许多热电氧化物,但它们的功率因数(PF)值太小(约10 W m⁻¹ K⁻²),无法得到令人满意的优值。将阴离子从O变为S,再变为Se是增加共价性的一种方法。在这篇综述中,选择了一些硫化物(二元Cr-S或衍生自层状TiS₂)的例子以及一个硒化物AgCrSe的例子来说明它们物理性质的特征。对仅有的两种半导体二元铬硫化物和一种层状AgCrSe硒化物的比较表明,PF值也与过渡金属氧化物的PF值处于相同数量级。相比之下,层状硫化物TiS₂和CuTiS₂的PF值更高,达到约10 W m⁻¹ K⁻²。显然,与Cr-S网络相关的磁性与基于Ti的硫化物的d特性相比,对PF是不利的。最后,AgCrSe中非常低的PF(700 K时PF = 2.25×10⁻³ W m⁻¹ K⁻²)被非常低的热导率(根据测量的比热容计算得κ = 0.2 W m⁻¹ K⁻¹)所补偿,从而在综述的化合物中得到最高的ZT值(ZT = 0.8)。人们认为475 K以上Ag阳离子存在类似玻璃态的状态是造成这一结果的原因。这一结果表明,开放框架中的声子工程是制备高效热电材料的一种非常有趣的方法。

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