Yahia I S, Shkir Mohd, AlFaify S, Ganesh V, Zahran H Y, Kilany Mona
Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia; Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo, Egypt.
Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia.
Mater Sci Eng C Mater Biol Appl. 2017 Mar 1;72:472-480. doi: 10.1016/j.msec.2016.11.074. Epub 2016 Nov 23.
In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15nm to 62nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis>Candida albicans>Shigella dysenteriae.
在这项工作中,作者通过低温微波辅助技术制备了不同碲浓度(0.04、0.08、0.16、0.24wt%)的纯HAp以及掺碲HAp的纳米棒和纳米片。计算了微晶尺寸、结晶度和晶格参数。场发射扫描电子显微镜(FE-SEM)研究证实,制备的纳米结构在未掺杂和低碲掺杂浓度下是直径约10nm的纳米棒。然而,在较高浓度时,它变成了厚度约5nm的纳米片。X射线衍射、傅里叶变换红外光谱(FT-IR)和傅里叶变换拉曼光谱(FT-Raman)研究表明,制备的产物为HAp,且碲已成功掺入。从能量色散X射线光谱(EDX)可知,纯HAp的钙磷摩尔比约为1.740,而0.04、0.08、0.16、0.24wt%碲掺杂的HAp的该比例分别约为1.53、1.678、1.724、1.792。发现微晶尺寸随着碲掺杂从15nm增加到62nm。在较高碲浓度下,介电常数的值有所增强。还测定了线性吸收系数的值,结果表明,掺碲的制备材料比纯材料更具吸收性,在辐射检测应用中将具有高度适用性。此外,通过琼脂圆盘扩散法检测了纯HAp和掺碲HAp对一些革兰氏阴性菌、革兰氏阳性菌和真菌的抗菌潜力。结果表明,掺碲HAp的抗菌活性强于纯HAp,其中对枯草芽孢杆菌>白色念珠菌>痢疾志贺氏菌表现出最高活性。