Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China.
Adv Mater. 2017 Mar;29(11). doi: 10.1002/adma.201605407. Epub 2016 Dec 28.
Monolayer antimonene is fabricated on PdTe by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.
采用外延方法在 PdTe 上制备单层碲化锑。理论预测，单层碲化锑具有大带隙，可用于纳米电子器件。空气暴露实验表明其具有惊人的化学稳定性，非常适合器件制造。本文提供了一种制造高质量单层碲化锑的方法，该方法具有几种优异的性能，可用于新型电子和光电子应用。
