碲化钯上单层黑磷烯的外延生长和空气稳定性
Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe.
机构信息
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China.
出版信息
Adv Mater. 2017 Mar;29(11). doi: 10.1002/adma.201605407. Epub 2016 Dec 28.
Monolayer antimonene is fabricated on PdTe by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.
采用外延方法在 PdTe 上制备单层碲化锑。理论预测，单层碲化锑具有大带隙，可用于纳米电子器件。空气暴露实验表明其具有惊人的化学稳定性，非常适合器件制造。本文提供了一种制造高质量单层碲化锑的方法，该方法具有几种优异的性能，可用于新型电子和光电子应用。
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