Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
Department of Mechanical, Industrial & Manufacturing Engineering, The University of Toledo, Toledo, Ohio, 43606, USA.
Adv Mater. 2017 Mar;29(11). doi: 10.1002/adma.201604606. Epub 2016 Dec 29.
Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization.
化学气相沉积(CVD)聚合直接将气相反应物合成到衬底上的有机薄膜。介电、半导体、导电和离子导电的 CVD 聚合物都已被轻易地集成到器件中。CVD 工艺中不存在溶剂,可实现高纯度层的生长,并避免可能出现的去湿现象,这会导致针孔缺陷。通过限制污染物和缺陷,可以在多个实验室中制备超薄(<10nm)的 CVD 聚合物器件层。CVD 方法特别适合合成不溶性导电聚合物、具有高密度有机官能团的层以及坚固的交联网络。此外,CVD 聚合物能够在诸如纸张和纺织品衬底等粗糙表面以及微纳结构器件的复杂几何形状上进行保形覆盖,这一点也很受重视。通过采用低温处理,可以避免 CVD 聚合对衬底和底层器件层的损害。本报告讨论了主要的 CVD 聚合技术的机制以及它们在器件和器件制造中的最新应用进展,重点介绍引发 CVD(iCVD)和氧化 CVD(oCVD)聚合。