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高密度铌酸锂光子集成电路。

High density lithium niobate photonic integrated circuits.

作者信息

Li Zihan, Wang Rui Ning, Lihachev Grigory, Zhang Junyin, Tan Zelin, Churaev Mikhail, Kuznetsov Nikolai, Siddharth Anat, Bereyhi Mohammad J, Riemensberger Johann, Kippenberg Tobias J

机构信息

Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015, Lausanne, Switzerland.

Center of Quantum Science and Engineering (EPFL), CH-1015, Lausanne, Switzerland.

出版信息

Nat Commun. 2023 Aug 10;14(1):4856. doi: 10.1038/s41467-023-40502-8.

Abstract

Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but are difficult to process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is a superior material for the manufacturing of photonic integrated circuits based on ferroelectrics, specifically LiNbO. Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss waveguides with losses as low as 4 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than one order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a III-V/LiNbO based laser with sub-kHz intrinsic linewidth and tuning rate of 0.7 PHz/s with excellent linearity and CMOS-compatible driving voltage. We also demonstrated a MZM modulator with a 1.73 cm length and a halfwave voltage of 1.94 V.

摘要

光子集成电路有潜力渗透到传统上局限于体光学的多种应用中。新型应用特别感兴趣的是诸如铌酸锂之类的铁电材料,它们具有大的普克尔效应,但难以通过干法蚀刻进行加工。在此我们证明,类金刚石碳(DLC)是用于制造基于铁电材料(特别是LiNbO)的光子集成电路的优质材料。使用DLC作为硬掩膜,我们展示了深度蚀刻、紧密限制、低损耗波导的制造,其损耗低至4 dB/m。与广泛使用的脊形波导相比,这种方法受益于高出一个数量级以上的面积集成密度,同时保持高效的电光调制、低损耗,并提供了实现高效光纤接口的途径。作为概念验证,我们展示了一种基于III-V/LiNbO的激光器,其固有线宽低于kHz,调谐速率为0.7 PHz/s,具有出色的线性度和CMOS兼容的驱动电压。我们还展示了一种长度为1.73 cm、半波电压为1.94 V的MZM调制器。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b52/10415301/60bbe7a0660d/41467_2023_40502_Fig1_HTML.jpg

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