Ding Shuyi, Cole Matthew T, Li Chi, Zhou Yanhuai, Collins Clare M, Kang Moon H, Parmee Richard J, Lei Wei, Zhang Xiaobing, Dai Qing, Milne William I, Wang Baoping
Display R&D Center , School of Science and Engineering , Southeast University , Nanjing 210096 , P. R. China . Email:
Electrical Engineering Division , Department of Engineering , Cambridge University , Cambridge , CB3 0FA , UK . Email:
RSC Adv. 2015 Dec 10;5(127):105111-105118. doi: 10.1039/c5ra20771a. Epub 2015 Sep 23.
We report on the improved field emission performance of graphene foam (GF) following transient exposure to hydrogen plasma. The enhanced field emission mechanism associated with hydrogenation has been investigated using Fourier transform infrared spectroscopy, plasma spectrophotometry, Raman spectroscopy, and scanning electron microscopy. The observed enhanced electron emissionhas been attributed to an increase in the areal density of lattice defects and the formation of a partially hydrogenated, graphane-like material. The treated GF emitter demonstrated a much reduced macroscopic turn-on field (2.5 V μm), with an increased maximum current density from 0.21 mA cm (pristine) to 8.27 mA cm (treated). The treated GFs vertically orientated protrusions, after plasma etching, effectively increased the local electric field resulting in a 2.2-fold reduction in the turn-on electric field. The observed enhancement is further attributed to hydrogenation and the subsequent formation of a partially hydrogenated structured 2D material, which advantageously shifts the emitter work function. Alongside augmentation of the nominal crystallite size of the graphitic superstructure, surface bound species are believed to play a key role in the enhanced emission. The hydrogen plasma treatment was also noted to increase the emission spatial uniformity, with an approximate four times reduction in the per unit area variation in emission current density. Our findings suggest that plasma treatments, and particularly hydrogen and hydrogen-containing precursors, may provide an efficient, simple, and low cost means of realizing enhanced nanocarbon-based field emission devices the engineered degradation of the nascent lattice, and adjustment of the surface work function.
我们报告了石墨烯泡沫(GF)在短暂暴露于氢等离子体后场发射性能的改善情况。使用傅里叶变换红外光谱、等离子体分光光度法、拉曼光谱和扫描电子显微镜研究了与氢化相关的增强场发射机制。观察到的增强电子发射归因于晶格缺陷面密度的增加以及部分氢化的类石墨烷材料的形成。经过处理的GF发射器的宏观开启场(2.5 V/μm)大幅降低,最大电流密度从0.21 mA/cm²(原始)增加到8.27 mA/cm²(处理后)。等离子体蚀刻后,经过处理的GF垂直取向的突起有效地增加了局部电场,导致开启电场降低了2.2倍。观察到的增强还归因于氢化以及随后形成的部分氢化的结构化二维材料,这有利地改变了发射器的功函数。除了石墨超结构的标称微晶尺寸增大外,表面结合物种被认为在增强发射中起关键作用。还注意到氢等离子体处理增加了发射空间均匀性,发射电流密度的单位面积变化减少了约四倍。我们的研究结果表明,等离子体处理,特别是氢气和含氢前驱体,可能提供一种有效、简单且低成本的方法来实现增强的基于纳米碳的场发射器件——新生晶格的工程降解以及表面功函数的调整。