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冠醚控制的薁作为构筑石墨烯晶体管的自下而上方法中的电子输运。

Gate-controlled electron transport in coronenes as a bottom-up approach towards graphene transistors.

机构信息

Center for Bioelectronics and Biosensors, Biodesign Institute, Arizona State University, Tempe, AZ 85287, USA.

出版信息

Nat Commun. 2010 Jun 29;1:31. doi: 10.1038/ncomms1029.

Abstract

Graphene is considered to be a large aromatic molecule, the limiting case of the family of polycyclic aromatic hydrocarbons. This fascinating two-dimensional material has many potential applications, including field effect transistors (FETs). However, the graphene sheets in these devices have irregular shapes and variable sizes, and contain various impurities and defects, which are undesirable for applications. Moreover, the bandgap of graphene is zero and, consequently, the on/off ratios of graphene FETs are small, making it difficult to build logic circuits. To overcome these difficulties, we report here a bottom-up attempt to fabricate nanoscale graphene FETs. We synthesize structurally well-defined coronene molecules (consisting of 13 benzene rings) terminated with linker groups, bridge each molecule to source and drain electrodes through the linkers, measure conductance and demonstrate the FET behaviour of the molecule.

摘要

石墨烯被认为是一种大的芳香族分子,是多环芳烃家族的极限情况。这种引人入胜的二维材料具有许多潜在的应用,包括场效应晶体管(FET)。然而,这些器件中的石墨烯片具有不规则的形状和可变的尺寸,并含有各种杂质和缺陷,这对于应用来说是不理想的。此外,石墨烯的带隙为零,因此石墨烯 FET 的导通/关断比很小,使得构建逻辑电路变得困难。为了克服这些困难,我们在这里报告了一种自下而上的尝试,以制造纳米级石墨烯 FET。我们合成了结构定义良好的蔻烯分子(由 13 个苯环组成),末端带有连接基团,通过连接基团将每个分子桥接到源极和漏极电极上,测量电导并证明了分子的 FET 行为。

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