KU Leuven, Instituut voor Kern- en Stralingsfysica, Celestijnenlaan 200 D, 3001, Leuven, Belgium.
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193, Barcelona, Spain.
Small. 2017 Mar;13(11). doi: 10.1002/smll.201603465. Epub 2017 Jan 9.
The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.
光刻和离子注入的组合被证明是制备横向多层结构的一种合适方法。通过在光刻掩蔽的 Au 夹置 Co 薄膜中进行氧离子注入，得到了由交替的 Co（1.6 µm 宽）和 Co-CoO（2.4 µm 宽）线组成的横向、成分和磁调制微图案。在线条上的磁电阻（即电流和外加磁场与线条平行）在室温下表现出有效的正巨磁电阻（GMR）行为。相反，在低温（即 10 K）下可以区分各向异性磁电阻和 GMR 贡献，因为 O 注入区域变得交换耦合。这种平面 GMR 主要归因于在弹簧磁型结构中矫顽力的空间调制，这导致在 Co/Co-CoO 界面处出现 180°奈尔外畴壁。这种方法在图案尺寸、形貌和组成调整方面的多功能性为制造用于自旋电子学研究和应用等的平面系统提供了独特的途径。
